Allicdata Part #: | FT150R12KE3GB4BDLA1-ND |
Manufacturer Part#: |
FT150R12KE3GB4BDLA1 |
Price: | $ 144.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO3-4 |
More Detail: | IGBT Module 3 Independent 1200V 200A 700W Chassis... |
DataSheet: | FT150R12KE3GB4BDLA1 Datasheet/PDF |
Quantity: | 1000 |
24 +: | $ 131.41600 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 3 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 200A |
Power - Max: | 700W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 150A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 10.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FT150R12KE3GB4BDLA1 is a type of Insulated Gate Bipolar Transistor (IGBT) module. It is a four-pack IGBT module, meaning it consists of four discrete IGBTs in half-bridge connection housed together in one package. As such, it can be used to increase power density and maximize thermal performance, as well as reduce board space.
The FT150R12KE3GB4BDLA1 is most commonly used in medium to high-voltage power inverters. It is ideal for frequency converters, photovoltaic inverters, medium voltage AC drives, rectifier bridges, medium voltage converters, induction heating, and other medium to high voltage power switch applications. It has a current rating of 150A and a pulse peak current 1200A, and a maximum blocking voltage of 1200V.
The key feature of the FT150R12KE3GB4BDLA1 is its half-bridge connection, which helps to maximize thermal performance and power density. The four discrete IGBTs in the package can be connected in phase-shifted arrangements to minimize discontinuous conduction mode losses, improve load current sharing between the four IGBTs, and reduce total switching losses in the circuit.
The FT150R12KE3GB4BDLA1 is capable of providing high power and reliability. It has a maximum junction temperature rating of 150°C, which helps to keep the module running efficiently even in high temperature environments. Additionally, it can handle overloads and short-circuits efficiently, with its integrated short-circuit protection which ensures safe operation at all times.
The FT150R12KE3GB4BDLA1 works on the principle of two-terminal manipulation. This means that one of the two terminals will control the conductivity between the two terminals. When a positive voltage is applied, the module will become more conductive, allowing electrical current to flow. This current is then used to power the desired circuit.
Overall, the FT150R12KE3GB4BDLA1 is an efficient and reliable IGBT module, capable of providing power and reliability for a variety of applications. Its small package size and high efficiency make it an ideal choice for medium to high-voltage power switch applications. With its integrated short-circuit protection, it can handle any overloads and short-circuits it might encounter.
The specific data is subject to PDF, and the above content is for reference
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