FT24C08A-UNR-T Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	8Kb (1K x 8)
Clock Frequency:	1MHz
Write Cycle Time - Word, Page:	5ms
Access Time:	550ns
Memory Interface:	I²C
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WFDFN Exposed Pad
Supplier Device Package:	8-DFN (2x3)

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Introduction

FT24C08A-UNR-T is a type of nonvolatile memory chip designed and manufactured by Future Technology Devices International Ltd (FTDI). This eight-kilobyte static random access memory (SRAM) chip is commonly used to store and read data in applications which require a low power consumption.

Application and Working Principle

FT24C08A-UNR-T is usually deployed in mobile phones, handheld computers, embedded microcontroller systems, telecommunication, automotive, data acquisition systems, industrial automation and medical electronics. Aside from being low power consumption, this memory chip also offers high speed data transfer as well as reliability in transmission. It operates using static random access memory (SRAM). Static random access memory refers to the generation of memory chips which are fully static and non-volative. This type of memory does not require constant power supply to maintain the memory contents, unlike a dynamic random access memory which refreshes its content periodically. SRAM has a higher access speed compared to other types of non-volatile memory due its ability to quickly read and write data. It is fully volatile, which means any data stored in the chip may be lost upon power failure.FT24C08A-UNR-T being a three port memory chip, contains one data port, one address port and a control port. In order to perform read and write operations, the address which needs to be accessed is written on the address port, while the data to be read or written is written on the data port. The control port holds control information (such as read/write enable pin), which can be used by the memory chip to control operations. Upon initiation of the read or write operation, the address is first written on the address port. The FT24C08A-UNR-T then checks the address port if the address matches the address being written. If the address matches, the chip then proceeds with the operation which is set on the control port (whether it is a read or write operation). If the address does not match, the operation is aborted. Additionally, this chip also contains a latch for each byte of memory to hold data during the read and write operation.

Advantages

FT24C08A-UNR-T is well-suited for applications which require a low power consumption. It operates at a low voltage of 2.2V to 3.6V, while the standby current is less than 1uA. It also has a wide temperature range from -40 ˚C to +85 ˚C, meaning it can be used in a variety of applications and environments. Additionally, the chip has a read speed of 200kHz and a write speed of 100kHz, allowing for a fast data transfer rate.

Conclusion

FT24C08A-UNR-T is a static random access memory chip designed by FTDI. It is mainly used in applications which require a low power consumption, such as mobile phones, handheld computers and embedded systems. This chip operates using a 3 port system, consisting of a data port, an address port and a control port. It also offers a wide operational temperature and a fast data transfer rate. All these features make this memory chip well-suited for its intended use.

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