FT24C512A-UTG-T Integrated Circuits (ICs) |
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Allicdata Part #: | 1219-1126-2-ND |
Manufacturer Part#: |
FT24C512A-UTG-T |
Price: | $ 0.33 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Fremont Micro Devices USA |
Short Description: | IC EEPROM 512K I2C 1MHZ 8TSSOP |
More Detail: | EEPROM Memory IC 512Kb (64K x 8) I²C 1MHz 550ns 8-... |
DataSheet: | FT24C512A-UTG-T Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.29339 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 512Kb (64K x 8) |
Clock Frequency: | 1MHz |
Write Cycle Time - Word, Page: | 5ms |
Access Time: | 550ns |
Memory Interface: | I²C |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The FT24C512A-UTG-T is a memory device used in a wide range of applications. It is a 512 kilibit serial I/O EEPROM and offers easy-to-use operations with multiple busy states and power saving features. The device features a built-in 24-bit Identification Number (IDN), which can be programed and modified by a single cycle command. The device also features a low-active power mode, which allows it to remain operational while consuming minimal power.
The FT24C512A-UTG-T\'s main application field is non-volatile memory storage. It provides reliable retention of data even when operating conditions vary or the power supply is disrupted. It is commonly used in embedded systems, control systems, communications, and sensors for storing product configurations, firmware updates, and security information. The device is capable of being reprogrammed in-circuit, allowing for flexibility in system development and implementation.
The FT24C512A-UTG-T employs a single-wire 2-wire bus-level communication protocol based on the Serial Peripheral Interface (SPI) bus protocol. It operates with data rates up to 1 Mbps and supports both block and page read/write operations. It is compatible with various microcontrollers, such as those from Atmel, Microchip, and Silicon Laboratories.
The FT24C512A-UTG-T utilizes a two-level structure for memory allocation. The logical first level is a page sector block structure and the second level is a byte, word, and double word. Pages are divided into 256 byte sectors, with each sector having its own unique address. The first level structure allows for higher efficiency when programming large blocks of data and for random access of individual bytes or words.
The FT24C512A-UTG-T has an extended voltage operating range from 2.5V to 5.5V and is tolerant to static disks. The internal registers can be configured in different ways such as one time programmable or writeable to provide enhanced reliability and data storage capabilities. It has an extended cycle life of up to 10,000 erase/write cycles.
In order to write or read data to and from the FT24C512A-UTG-T, the master controller initiates a serial data transfer with the device. When the device is connected to the System Bus, the master controller performs a control operation to select the FT24C512A-UTG-T. Then the command and address bytes are sent to the device followed by the desired data. The master controller then sends a STOP signal and receives the acknowledge bit.
The FT24C512A-UTG-T also has several register bits that determine the behavior of the device. These register bits can be used to set the following conditions:
- Partial write enable
- Page write enable
- Write protect enable
- Read protect enable
- Write protect password enable
- Read protect password enable
- Write protect timeout
- Page erase enable
- Page write enable
- Byte write enable
- Sequential read enable
The FT24C512A-UTG-T is an ideal memory device for applications requiring reliable data storage and easy programming. With its extended voltage operating range, high endurance cycles, and protection features, the device is capable of meeting varying design requirements. Its low-active power mode and ability to be reprogrammed in-circuit ensure optimal flexibility and energy efficiency.
The specific data is subject to PDF, and the above content is for reference
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