Allicdata Part #: | 1219-1005-ND |
Manufacturer Part#: |
FT24C64A-USR-B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Fremont Micro Devices USA |
Short Description: | IC EEPROM 64K I2C 800KHZ 8SOP |
More Detail: | EEPROM Memory IC 64Kb (8K x 8) I²C 800kHz 700ns 8-... |
DataSheet: | FT24C64A-USR-B Datasheet/PDF |
Quantity: | 894 |
Series: | -- |
Packaging: | Tube |
Part Status: | Not For New Designs |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 64Kb (8K x 8) |
Clock Frequency: | 800kHz |
Write Cycle Time - Word, Page: | 5ms |
Access Time: | 700ns |
Memory Interface: | I²C |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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Introduction
The FT24C64A-USR-B is a 64K-bit memory which utilizes the FRAM technology made by Fujitsu Semiconductor. As a non-volatile memory, it features an unlimited number of write cycles that retains data without the need of an external power supply. This makes the FT24C64A-USR-B a go-to memory for applications needing long-term durability and reliability. It is also known for its high speed data throughput, allowing for read and write cycles on a scale of nanoseconds.
Applications Field of the FT24C64A-USR-B
The FT24C64A-USR-B can be used for a variety of applications needing a reliable non-volatile memory. A few of these include digital camera, medical devices, automotive applications, industrial data loggings, gaming consoles, smart meters, and home entertainment systems. With its wide range of applications, this memory is well-suited for projects that require a lasting memory solution.
Working Principle of the FT24C64A-USR-B
At the heart of the FT24C64A-USR-B’s working principle is the ferroelectric RAM (FRAM) technology. This technology combines the best features of both random access memory (RAM) and read-only memory (ROM) into a single memory solution. The FT24C64A-USR-B utilizes an array of ferroelectric cells which are arranged in a matrix, allowing for high speed read and write cycles. Additionally, each ferroelectric cell holds a charge which is used to store the data.
The FT24C64A-USR-B has a programming/erasing voltage of 6V, meaning it can be programmed with voltages up to 6V and erased with voltages even lower than that. Its writing voltage is 3.3V, so it runs using a relatively low supply of power. It has two input pins for clock and data that can be programmed, allowing for faster data transfer rates. Its data storage capability is 64K-bits, enough for storing large files such as databases and images.
The FT24C64A-USR-B also has specific commands for beginning a write cycle, and controlling writes and reads from the memory. This allows for maximum control over data input and output, making it an ideal choice for EEPROM applications. With its long-term durability, high speed data throughput, and low power consumption, the FT24C64A-USR-B is an ideal choice for reliable non-volatile memory.
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