FZ1800R17HE4B9HOSA2

The FZ1800R17HE4B9HOSA2 is an IGBT-module from the subsidiary company Infineon Technologies of the multinational semiconductor device manufacturer, Siemens AG. It is designed for high power application in demanding power efficiency requirements and comprises of both switching and logic functions. It is considered to be one of the most efficient modules currently in the market.

Application Field

The FZ1800R17HE4B9HOSA2 is ideal for use in power conversion systems and power semiconductor devices in various applications such as industrial, automotive and aerospace. Owing to its modulation technology, the device ensures reliable and consistent performance in high power applications. These include applications such as high-power DC-DC converters and PWM controllers, isolated AC-DC and DC-DC converters and solar photovoltaic inverters.

Working Principle

The FZ1800R17HE4B9HOSA2 employs the latest IGBT technology which improves the performance of the power semiconductor devices. This IGBT device uses the active gate control technology to reduce the turn-on loss and increase the turn-on time. This technology also reduces the noise and increases the switching frequency. Furthermore, the device is designed to have soft turn-off, which helps in reducing the peak voltage and limits the current rise time during turn-off.

The FZ1800R17HE4B9HOSA2 is based on Insulated Gate Bipolar Transistor (IGBT) which is voltage-controlled switch. It is a bidirectional device that can control current in only two directions, i.e., forward and reverse. An IGBT consists of two terminals, the gate and emitter, and two junctions. A drain-source voltage is applied across the two junctions of the IGBT switch to turn the switch on, while the gate voltage is applied to the gate terminal to control the current flow.

The FZ1800R17HE4B9HOSA2 is equipped with Infineon’s modular drive technology which offers best-in-class switching characteristics. This drive technology uses a half-bridge configuration for easy system integration and makes utilization of a hybrid driver for a wide range of applications. Furthermore, the device also comes with a built-in over-heat protection, which helps protect the IGBT device from damage due to high temperature.

Conclusion

The FZ1800R17HE4B9HOSA2 is a highly advanced IGBT module designed for high current applications. It offers high power efficiency and a wide range of features such as soft turn-off, over-heat protection etc. These features make the device ideal for various industrial, automotive and aerospace applications.