FZ1800R17HP4B9HOSA2 Allicdata Electronics
Allicdata Part #:

FZ1800R17HP4B9HOSA2-ND

Manufacturer Part#:

FZ1800R17HP4B9HOSA2

Price: $ 681.59
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MODULE IGBT IHMB190-2
More Detail: IGBT Module Trench Single Switch 1700V 1800A 11500...
DataSheet: FZ1800R17HP4B9HOSA2 datasheetFZ1800R17HP4B9HOSA2 Datasheet/PDF
Quantity: 1000
1 +: $ 619.63000
Stock 1000Can Ship Immediately
$ 681.59
Specifications
Series: --
Part Status: Active
IGBT Type: Trench
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 1800A
Power - Max: 11500W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 145nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FZ1800R17HP4B9HOSA2 is a Silicon Carbide module. This module includes 6 individual IGBTs connected in series to offer optimum performance. It is a high power, silicon carbide-based Mosfet with an operating voltage of 1700V and a continuous current of 1800A. It is designed for use in high-efficiency, high-frequency applications such as power conversion and motor control. This module also offers short circuit protection, enabling it to safely handle high currents and voltages.

The FZ1800R17HP4B9HOSA2 is best suited for applications that require a high-performance, efficient, and reliable power semiconductor solution. It is used in a wide range of applications such as power conversion, motor control, and renewable energy. It can be used in solar inverters, dc/dc converters, and wind power converters. It is also used in electric vehicles, high-frequency welding machines, and industrial robots. Furthermore, its short circuit protection feature makes it suitable for use in high current and voltage applications.

The FZ1800R17HP4B9HOSA2 module works on the basic principle of an IGBT. An IGBT is essentially a junction between two MOS transistors. The top transistor acts as an N-channel device, which allows current to flow from the collector to the emitter. The bottom transistor acts as a P-channel device, allowing current to flow from the emitter to the collector. This enables the module to function as a voltage switch between the emitter and collector.

The module can be used to control the speed and torque of an electric motor, allowing it to run smoothly and efficiently. It also offers precise pulse-width modulation and current control, allowing it to accurately control the speed and torque of the motor. Furthermore, it can be used to improve the efficiency of power converters and provide precise control of the output voltage and current of the device.

The FZ1800R17HP4B9HOSA2 module is designed for use in high-performance, high-frequency applications and is capable of providing a reliable and efficient power electronic solution. With its short circuit protection feature and its precise current and voltage control, it is one of the most reliable and efficient IGBT modules on the market. It is ideal for use in high-efficiency power conversion, motor control, and renewable energy applications.

The specific data is subject to PDF, and the above content is for reference

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