Allicdata Part #: | FZ3600R12HP4HOSA2-ND |
Manufacturer Part#: |
FZ3600R12HP4HOSA2 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT IHMB190-2 |
More Detail: | IGBT Module Trench Single Switch 1200V 4930A 19000... |
DataSheet: | FZ3600R12HP4HOSA2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench |
Configuration: | Single Switch |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 4930A |
Power - Max: | 19000W |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 3600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 225nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FZ3600R12HP4HOSA2 is an insulated gate bipolar transistor module and is part of the Infineon Technologies family of IGBT modules. It is designed to be used in a variety of applications, including consumer electronics and industrial electronics.
The FZ3600R12HP4HOSA2 is designed to be used with a bus voltage of 12V and a power rating up to 4kW. The IGBT module is rated for continuous conduction mode, which is typical for most applications where the element is switched on for an extended period of time. The module is designed for inductive and resistive loads with a wide-range of load ratings.
The FZ3600R12HP4HOSA2 is equipped with a robust gate drive circuit, which provides protection against short-duration voltage and current disturbances. The module also includes protection against over-voltage, over-current and short-circuit faults. In addition, the module has built-in protection against thermal runaway and output short-circuiting.
The FZ3600R12HP4HOSA2 works on the principle of bipolar junction transistor (BJT) technology, which is the basis of most IGBTs. An IGBT is essentially a combination of a field effect transistor (FET) and bipolar junction transistor. In an IGBT, a p-type semiconductor material is sandwiched between two n-type semiconductor materials. The p-type material acts as a gate and the n-type materials act as both the emitter and the collector. When a voltage is applied to the gate, it changes the conductance of the p-type material, allowing current to flow through the n-type materials.
The FZ3600R12HP4HOSA2 is commonly used in the automotive industry, primarily in applications such as car audio, power windows and power seats. It is also used in a wide range of consumer electronics products, from washing machines and air conditioners to microwave ovens and TVs. In the industrial sector, the FZ3600R12HP4HOSA2 is used for motor drives, power supplies, UPS systems and solar inverters.
The FZ3600R12HP4HOSA2 has many advantages over conventional IGBTs. It is capable of higher speed switching, higher current densities and higher efficiency than other IGBTs. The module is designed for easy installation and application flexibility. It also provides superior thermal dissipation and improved reliability.
In summary, the FZ3600R12HP4HOSA2 is a versatile IGBT module which can be used in a variety of applications. It is designed to provide superior performance and reliability and is suitable for a wide range of uses. The module is ideal for consumer and industrial applications, such as motor drives, power supplies, UPS systems, solar inverters and many other applications. With its robust gate drive circuit, the FZ3600R12HP4HOSA2 ensures reliable and safe operation, making it one of the most popular IGBT modules available today.
The specific data is subject to PDF, and the above content is for reference
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