Allicdata Part #: | FZ900R12KE4HOSA1-ND |
Manufacturer Part#: |
FZ900R12KE4HOSA1 |
Price: | $ 112.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 900A |
More Detail: | IGBT Module Trench Field Stop Single 1200V 900A 43... |
DataSheet: | FZ900R12KE4HOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 102.64000 |
Series: | C |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 900A |
Power - Max: | 4300W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 900A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 56nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FZ900R12KE4HOSA1 is a type of Insulated Gate Bipolar Transistor (IGBT) module from the Quality Laser series which is manufactured by ABB. It has a single die and is designed for high-speed power applications. This IGBT module has a wide variety of applications and its working principle is fairly simple to understand.
Application Field of FZ900R12KE4HOSA1 :
FZ900R12KE4HOSA1 module is a high-speed switching device which is suitable for the applications that require high-frequency operation and high-voltage blocking capabilities. It can be used in servo motor control, digital signal processing circuits, and uninterruptible power supplies (UPS). It is also used in the high current and voltage switching applications such as generators, inverters, and HVAC systems. Additionally, it can be used in the high-power switching applications such as AC servo drives, energy storage systems, and industrial automation. Furthermore, this IGBT module is also suitable for the high current power distribution in automotive and renewable energy systems.
Working Principle of FZ900R12KE4HOSA1 :
The working principle of the FZ900R12KE4HOSA1 module is based on the principles of electrical engineering and solid state electronics. It consists of an N-type and a P-type semiconductor material, which are stacked together. A thin insulator is placed between them. When a positive voltage is applied to the gate terminal, electrons are attracted to the positive voltage, creating a conductive path between the NWP substrate and the PNP substrate. This conducts electric current from the NWS to the PNP substrate, allowing electric current to flow from the source to the drain. This is the working principle of an n-channel IGBT module.
The FZ900R12KE4HOSA1 module features a high-speed switching capability and low power losses. It operates at very high switching frequencies of up to 1.5 MHz and has a high blocking voltage up to 1.2kV. It also features a low on-state power dissipation and a low gate charge, which makes it very efficient. The module has a very wide range of operating temperature, ranging from -40 to +150°C.
Overall, FZ900R12KE4HOSA1 is an excellent choice for high-speed switching applications. It provides high-speed operation with low power loss and is suitable for use in a variety of applications. It is a reliable and cost-effective solution for high current switching applications.
The specific data is subject to PDF, and the above content is for reference
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