Allicdata Part #: | FZ900R12KP4HOSA1-ND |
Manufacturer Part#: |
FZ900R12KP4HOSA1 |
Price: | $ 108.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR 62MM-2 |
More Detail: | IGBT Module Single 1200V 900A Chassis Mount Modu... |
DataSheet: | FZ900R12KP4HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 98.30520 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 900A |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 900A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 56nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FZ900R12KP4HOSA1 Application Field and Working Principle
FZ900R12KP4HOSA1 is part of a family of insulated gate bipolar transistors (IGBTs). It is an advanced semiconductor device with a variety of applications, especially in switching and power control. As a module, this type of transistor is well suited for applications ranging from motor control systems, automotive and aerospace applications, household appliances, lighting, and industrial systems.
FZ900R12KP4HOSA1 has some distinct features such as an integral antiparallel snubber circuit, a frequency dependent (EMF) voltage rise from 100V to 1200V, a maximum current rating of 80A, a 50kHz switching frequency, and an operating temperature range from -40°C to 150°C. It also features excellent thermal resistance performance and a low on-state collector-emitter voltage (Vce(on)).
The working principle behind an FZ900R12KP4HOSA1 module is not unlike other types of IGBTs. The device is a four-layer semiconductor with a P-N-P-N structure that acts as a switch, allowing it to either conduct or block the flow of electrical current when it is activated. When the device is off, the gate-emitter voltage is brought to zero and the diode-like properties of the IGBT block the current. When the voltage between the gate and emitter is increased, the transistor is activated, allowing the current to flow. The module also includes an integral antiparallel snubber circuit, which helps reduce inductive ringing and increases the life of the transistor.
FZ900R12KP4HOSA1 is especially useful in industrial applications due to its features and reliability. This type of transistor is rugged, can handle high power loads, and is well suited for applications that require high frequency switching. Moreover, the design of the FZ900R12KP4HOSA1 transistors facilitates the integration of its components into any system. This makes it easier for engineers and technicians to install, maintain, and control.
Overall, FZ900R12KP4HOSA1 is a reliable and versatile IGBT module. Its integral antiparallel snubber circuit, wide operating temperature range, and high switching frequency enable it to be used in a multitude of industrial applications, ranging from motor control systems to automotive equipment.
The specific data is subject to PDF, and the above content is for reference
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