Name: FZT2222ATA
Brand: Diodes Incorporated
SKU: FZT2222ADKR-ND
Availability: InStock

Allicdata Part #:	FZT2222ADKR-ND
Manufacturer Part#:	FZT2222ATA
Price:	$ 0.00
Product Category:	Discrete Semiconductor Products
Manufacturer:	Diodes Incorporated
Short Description:	TRANS NPN 40V 0.6A SOT-223
More Detail:	Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 2W S...
DataSheet:	FZT2222ATA Datasheet/PDF
Quantity:	1000

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Specifications

Series:	--
Packaging:	Digi-Reel®
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	2W
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	FZT2222A

Description

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FZT2222ATA application field and working principle

The FZT2222ATA is a PNP silicon epitaxial transistor from the NXP family of transistors. It is used in a wide range of applications such as low speed switching and amplifier stages. It is also used in systems such as voltage stabilizers and temperature controllers. In terms of electrical characteristics, the FZT2222ATA has a minimum current gain of 50, a maximum current gain of 300 and a collector-emitter saturation voltage of 2V. The FZT2222ATA belongs to the bipolar junction transistors (BJT) family and is a single PNP type device. Bipolar transistors feature two internal junctions between different types of semiconductor materials. The FZT2222ATA has two P type doping regions which together form the emitter-base junction. This junction is highly doped with dopants such as boron and phosphorus. These two regions also form a p-n-p transistor. The operation of a bipolar transistor is based on the current flow through the base and emitter terminals. When an applied voltage is applied to the base-emitter junction, it changes the current flow between the base and the emitter. This in turn causes the collector current to change. When the base current is increased, the collector current also increases and vice versa. In a p-n-p transistor, when a positive voltage is applied to the emitter, electrons flow from the emitter to the base and then to the collector. This forces current to flow in the same direction, allowing current amplification. Thus, FZT2222ATA can be used as a switch or amplifier depending on the applied voltage and current. In switching applications, it can be used to control the on/off operation of a device. In amplifier applications, it is used to amplify the input signal. It is commonly used in amplifiers for high frequency signals or for low frequency baseband signals. It is also used in audio and video switching applications, voltage regulators and current sensors.

The specific data is subject to PDF, and the above content is for reference

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FZT2222ADKR-ND

FZT2222ATA

Discrete Semiconductor Products