FZT3019 Allicdata Electronics

FZT3019 Discrete Semiconductor Products

Allicdata Part #:

FZT3019TR-ND

Manufacturer Part#:

FZT3019

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 1A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1W Surf...
DataSheet: FZT3019 datasheetFZT3019 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Base Part Number: FZT3019
Description

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The FZT3019 bipolar junction transistor (BJT) falls into a class of single transistors, with many distinguishing characteristics. It is a high voltage, high-speed NPN transistor, which is specifically designed to withstand high breakdown voltages while providing rather high switching speeds. Because of its breakdown characteristics, the FZT3019 is of particular interest in automated flow control, automotive systems, and other high-voltage applications, where the ability to switch quickly is needed.

The FZT3019 transistor is the ideal choice when it comes to optimizing the performance of high-voltage and high-power applications. It eliminates the need for separate power structures, thanks to its integrated circuit design. This results in a more reliable, cost effective and energy-efficient overall system.

The FZT3019 transistor consists of two pins. The general-purpose pin is used to control the base-emitter voltage, while the second pin controls the base-collector voltage. The base-collector junction is responsible for the current amplification characteristic of the transistor. To increase the current transfer between the two pins, the collector is connected to a source of positive bias voltage, and the base-emitter junction is connected to a source of negative bias voltage.

The working principle of the FZT3019 is based on the basic operation of a BJT. In a BJT, the current flows from the emitter to the collector, where it is amplified by the base-emitter junction and the base-collector junction. The current transfer process is controlled by the base-emitter voltage, which controls the electron current flow to the collector. The positive bias voltage applied to the collector induces a voltage drop across the base-collector junction, which increases the current transfer. This increased current transfer is the primary factor that determines the overall output of the transistor.

In addition to its high-voltage and high-power applications, the FZT3019 is also well-suited for a variety of other applications, such as in audio amplifier designs, voltage and current analog switches, small signal amplifiers, digital logic circuits, DC motors, voltage regulators and signal processing circuits. The FZT3019 offers excellent performance in all of these applications, and is often used due to its low noise, high gain, low input bias current, and fast switching characteristics.

The FZT3019 is particularly appealing for designers looking for a robust and reliable high-voltage and high-power solution. It has been designed to minimize the end-user’s energy consumption, while at the same time providing the utmost in performance. This transistor has stood the test of time, and is likely to continue to be a staple of high-performance electronics for years to come.

The specific data is subject to PDF, and the above content is for reference

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