FZT458TA Discrete Semiconductor Products |
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Allicdata Part #: | FZT458TR-ND |
Manufacturer Part#: |
FZT458TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 400V 0.3A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 300mA 50MHz 2W S... |
DataSheet: | FZT458TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 6mA, 50mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 10V |
Power - Max: | 2W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT458 |
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FZT458TA is an NPN high performance transistor of the Bipolar (BJT) transistor family, specifically of the Single type. FZT458TA is used in amplifying applications and switching circuits, and its main purpose is to provide maximum current and voltage gains.
FZT458TA has an excellent gain character, with a very low turn-on voltage, and high speed performance. It provides greater than 3 Amps continuous collector current and up to 1,000 peak current. Its typical hFE value is 400, with a gain bandwidth product (fT) of 200 MHz.
The FZT458TA can be used in various standard amplifying applications, such as linear amplifiers, non-inverting amplifiers, and audio amplifiers. It can also be used as an adjustable gain pre-amplifier with its adjustable current gain adjustment capability. Besides, due to its low turn-on voltage, it can be used in high-gain DC amplifiers or high-voltage amplifiers.
FZT458TA is also suitable for switching in circuits. The easy driving requirements make it an ideal choice for low-level switchings and logic circuits. Additionally, its wide voltage operation range gives it the capability to drive high-emitter voltage circuits such as those used in RF switches.
The working principle of FZT458TA is almost the same as any other BJT transistors, where the base current “controls” the Collector current. When the base current is increased, the minority carriers (holes if npn, electrons if pnp) in the base region are injected into the collector region, providing more carriers for the current to flow through. This will in turn increase the collector current.
To sum up, FZT458TA is an excellent NPN high performance Bipolar Transistor, specifically of the Single type, used in a variety of amplifying applications and switching circuits. Its main advantages are its very high gain bandwidth, low turn-on voltage, and high current capabilities. As such, it is a popular choice for low-level switching for logic circuits, high-gain amplifiers, and RF switches.
The specific data is subject to PDF, and the above content is for reference
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