Allicdata Part #: | FZT558TC-ND |
Manufacturer Part#: |
FZT558TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 400V 0.2A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 400V 200mA 50MHz 2W S... |
DataSheet: | FZT558TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 6mA, 50mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 10V |
Power - Max: | 2W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT558 |
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The FZT558TC is a type of single bipolar (BJT) transistor. This device can be used by itself or in combination with other similar transistors to create a variety of functional circuits. It is an excellent choice for applications where reliability, power efficiency, and/or cost containment are important criteria.
A BJT is an active semiconductor device composed of three layers. It has two junctions, one between the emitter and base, and one between the collector and base. A current passing through the emitter and base will cause an amplified current to flow from the collector and base. This is called current gain, and it is the most important characteristic of a BJT. The current gain of the FZT558TC is 200.
The FZT558TC is designed for applications such as audio amplifiers, low-frequency and medium-frequency switching, power supplies, and line drivers. When used in an audio amplifier, it can provide output power of up to 20 Watts. In low-frequency and medium-frequency switching, it can switch currents up to ½ Amp. In power supplies, it can provide an output of up to 2 Amps. The FZT558TC is also capable of driving TTL/CMOS logic circuits as well as line drivers.
The FZT558TC has a maximum collector-base voltage rating of 30 volts, a maximum collector-emitter voltage rating of 25 volts, and a maximum emitter-base voltage rating of 6 volts. It has a maximum DC current gain of 200 and a maximum power dissipation of 500 mW. It is available in the TO-92 package and can operate over a temperature range of -65°C to +150°C.
The working principle of the FZT558TC is based on an NPN transistor. When a forward bias is applied on the base-emitter junction, it creates a voltage drop across the junction. This results in the emergence of minority charge carriers, which are usually holes in the NPN transistor. These holes collect electrons from the emitter and transfer them to the collector, resulting in the flow of current across the collector-emitter junction.
The FZT558TC has many advantages. It has a high current gain and excellent thermal stability, making it ideal for a wide range of applications. It also has a low collector-base saturation voltage, enabling it to switch large current levels with minimal power loss. Furthermore, its low-leakage current makes it suitable for low-voltage applications such as line drivers or logic circuits.
In conclusion, the FZT558TC is an excellent choice for a wide variety of applications. It is a single bipolar (BJT) transistor with a current gain of 200, and it can be used to switch currents up to ½ Amp and provide up to 20 Watts of output power. It is reliable, cost-effective, and can operate over a wide temperature range. The FZT558TC\'s working principle is based on an NPN transistor, and its advantages include excellent thermal stability and low-leakage current.
The specific data is subject to PDF, and the above content is for reference
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