FZTA42TC Allicdata Electronics
Allicdata Part #:

FZTA42TC-ND

Manufacturer Part#:

FZTA42TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 300V 0.5A SOT223
More Detail: Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 2W S...
DataSheet: FZTA42TC datasheetFZTA42TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 2W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZTA42
Description

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The FZTA42TC is a single Bipolar Junction Transistor, normally used for applications such as switching, low noise amplifiers, small signal amplifiers, analog linear work and voltage regulators. This transistor is ideal for use in high performance switching and low noise amplification applications.

The FZTA42TC is silicon based, with a planar geometry. It has a maximum voltage rating of 40V and a minimum voltage rating of 1.6V, with a maximum current rating of 0.2A. It has an operating temperature range of -55°C to +125°C. The device is widely used due to its high performance and cost effectiveness.

The FZTA42TC is designed with three principal components, namely the emitter, base and collector. The emitter is the negative terminal and the collector is the positive terminal, both separated by a thin layer of silicon. The base is the third terminal and serves to control the flow of current between the emitter and collector. The charge carriers, electrons and holes in the base are subjected to electric fields, thereby controlling the rate of flow of current between the collector and emitter.

The working principle of the FZTA42TC is based on the interaction of electrons and holes in the base. When the voltage is applied between the collector and emitter, a small base current is conducted and this results in the formation of an electron-hole pair. The electron-hole pair cause an increase in the number of electrons and holes in the base and this consequently increases the collector current. As the collector current increases, so does the base current and thus the gain of the device.

The FZTA42TC is commonly used in digital circuits, analog audio circuits and high speed switching circuits. It is ideal for use in applications requiring low noise amplifiers, small signal amplifiers, analog linear work and voltage regulators as it has a high power dissipation and a very low noise figure. Furthermore, it is also well suited for high current drive applications due to its high collector current capabilities and high signal-to-noise ratio.

The FZTA42TC is extremely robust and has a very low leakage current, lending it versatility and a high level of reliability. It operates with very low power consumption and offers good circuit stability, making it an excellent choice for a wide range of applications. The FZTA42TC is also compatible with surface mount technology, which makes it ideal for applications requiring a compact form factor.

In conclusion, the FZTA42TC is an ideal choice for a variety of signals switching, amplification, and voltage regulation applications. Its compact form factor, long life, high power dissipation, low noise figure and high signal-to-noise ratio make it an excellent choice for a range of circuit designs. It is robust, reliable and very cost effective, making it one of the most popular transistors available in the market.

The specific data is subject to PDF, and the above content is for reference

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