| Allicdata Part #: | 1242-1257-ND |
| Manufacturer Part#: |
GAP05SLT80-220 |
| Price: | $ 219.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | GeneSiC Semiconductor |
| Short Description: | DIODE SCHOTTKY 8KV 50MA AXIAL |
| More Detail: | Diode Silicon Carbide Schottky 8000V 50mA (DC) Thr... |
| DataSheet: |  GAP05SLT80-220 Datasheet/PDF |
| Quantity: | 1000 |
| 10 +: | $ 197.39900 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 8000V |
| Current - Average Rectified (Io): | 50mA (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 4.6V @ 50mA |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0ns |
| Current - Reverse Leakage @ Vr: | 3.8µA @ 8000V |
| Capacitance @ Vr, F: | 25pF @ 1V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | Axial |
| Supplier Device Package: | -- |
| Operating Temperature - Junction: | -55°C ~ 175°C |
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Overview
GAP05SLT80-220 is a diode rectifier module with a single, small and fast recovery element. It is widely used in a variety of applications and is suitable for high frequency rectification, wave shaping, voltage-regulated power supplies, and reverse bias potential reduction.
Construction
GAP05SLT80-220 is a single diode, rectifier module with a high frequency and low storage element. The diode consists of a single diode, a high-voltage, medium-power thyrister, and a heat sink. The dielectric and cathode tubes are combined and the package is integrated into a temperature-controlled heat sink. The temperature of the rectifier can be stabilized due to the temperature control of the heat sink.
The single diode operation ensures uniform voltage over a wide range of temperatures and current loads. The rectifier module consists of a high-voltage dipole, enabling extremely high reverse bias voltages. The silica ceramic used for the dielectric is selected for the application and temperature range of the module. The temperature is measured with a thermocouple that is mounted on the module and the current load determines the temperature of the module.
Application Field
GAP05SLT80-220 is widely used in a variety of applications, such as high frequency rectification, wave shaping, voltage-regulated power supplies, reverse bias potential reduction, line fault reset, and power saving in the power distribution sector. The fast recovery and low storage characteristics of the single element make it suitable for applications where there is little time for recovery from reverse bias operations.
It is also widely used in telecommunication, industrial, and UPS systems for power supply applications. The fast recovery capabilities of the diode makes them suitable for applications where noise must be eliminated and/or impulse noise present in the system. The low storage characteristics of the diode make them attractive for high frequency applications that require fast diode switching.
Working Principle
The GAP05SLT80-220 rectifier module is used in a single-phase full-wave bridge application. The bridge consists of four diodes that are wired in a bridge rectifier configuration. The diode operates in three modes, forward conduction, reverse biased, and high-voltage breakdown. In forward conduction mode, the diode allows the current to flow in one direction only, in reverse biased mode, the diode acts as a large resistance, and in break-down mode, the voltage across the diode increases and the junction\'s current is limited.
In forward conduction mode, the module acts like a switch, allowing the current in one direction and providing a low resistance path for the current. In reverse biased mode, the PN junction offers a high resistance, blocking the flow of current. When the voltage across the diode exceeds its breakdown voltage, the diode experiences an avalanche breakdown. The breakdown voltage of the diode can be adjusted by the change in temperature, allowing precise control of the breakdown voltage.
The heat generated by the diode will also increase the temperature of the dielectric and the surrounding area, due to the low thermal profile of the diode. The increase in temperature of the diode allows for the precise regulation of the breakdown voltage of the diode. The heat produced by the diode can also be controlled by a temperature-controlled heat sink to ensure that the temperature of the module remains stable.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| GAP05SLT80-220 | GeneSiC Semi... | 219.33 $ | 1000 | DIODE SCHOTTKY 8KV 50MA A... |
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