GB01SLT06-214

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650V
Current - Average Rectified (Io):	1A (DC)
Voltage - Forward (Vf) (Max) @ If:	2V @ 1A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0ns
Current - Reverse Leakage @ Vr:	10µA @ 6.5V
Capacitance @ Vr, F:	76pF @ 1V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	DO-214AA
Operating Temperature - Junction:	-55°C ~ 175°C
Base Part Number:	GB01SLT06

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GB01SLT06-214 is a single phase, low-frequency, ultra-high-efficiency rectifier diode used in a variety of applications. The device has a low forward voltage drop and high-temperature operating capability, making it suitable for applications where low-voltage, high-current rectification is required. The device is available in a range of voltage ratings, from 600-1000V, which allows it to be used in a range of applications.The common application fields of GB01SLT06-214 are standard rectifier diode, bridge type diode, and high voltage diode. It can be used as a rectifier diode in power supply and charger applications, railway traction systems and solar inverter. It can also be used as a bridge type diode in DC-DC converter, DC motor speed control, converter and frequency changer. Additionally, it can be used as a high-voltage diode in electrostatic precipitator and vacuum equipment. Its uses are not limited to these applications, be sure to consult the data sheet for more information. The working principle of GB01SLT06-214 is based on PN junction and forward bias. A PN junction is created when two n-type and p-type doped semiconductors are joined together. When the junction is forward biased, the majority carriers in the n-type and p-type semiconductor diffuse across the junction, creating a potential barrier and allowing current to flow. The higher the forward voltage applied to the device, the greater the amount of current that can flow through the device. The forward bias reduces the potential barrier, allowing electrons to move more easily across the junction. This is the basic mechanism that allows GB01SLT06-214 to control the flow of current in a circuit.The device has a high temperature operating capability, meaning that it can handle up to 90°C without having any effect on its performance or reliability. This makes it ideal for applications that require a high temperature environment. Additionally, the device has a low forward voltage drop of 0.48V, making it more efficient than other rectifier diode technologies.The device also has several safety features to protect it in the event of an overload. For instance, the device has an intrinsic current reduction feature which helps prevent the diode from overheating when there is an overload. Furthermore, the device is designed to protect itself against transient high-current pulses, protecting vulnerable circuits from electrical overshoot.Overall, the GB01SLT06-214 is an ultra-high efficiency and high temperature capable rectifier diode that can be used in a variety of applications. Its high temperature operating capability, low forward voltage drop and safety features make it an attractive option for low-voltage, high-current rectification applications. Be sure to review the data sheet for more information on its features and specifications.

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