GB02SLT12-252

Diodes - Rectifiers - Single

The GB02SLT12-252 is a reverse conducting Schottky barrier rectifier device, which is much more efficient than the more traditional p-n junction rectifier diodes. The Schottky barrier is created using a metal-semiconductor junction. This barrier forms a diode-like structure, and the barrier height decreases with increased current.

Applications

The GB02SLT12-252 is typically used in applications such as electronic lighting ballasts, automotive systems, high voltage communications equipment, and power supplies. It has a breakdown voltage of at least 125V, and can handle a maximum recurring peak forward current of 2.0A.

Working Principle

The Schottky barrier diode works on the basis of the reverse-bias potential difference between the metal and the semiconductor. When a positive voltage is applied to the metal, an electric field is created between the two of them. This increases the potential barrier, and as it does so, electrons as well as other charge carriers, are increased in the semiconductor, thus creating a current potential. This current potential is then used to induce a current in the attached external circuit.

When the applied voltage reaches a certain level known as the \'breakdown voltage\', the current in the reverse direction begins to become significantly higher and current begins to flow in the reverse direction. This reverse current should then be limited in order to avoid any damage to the device. The reverse current should be kept below the maximum rated current. The reverse current is also limited by the device\'s reverse breakdown voltage.

Conclusion

The GB02SLT12-252 is a highly efficient reverse conducting Schottky barrier rectifier device that is typically used in applications such as electronic lighting ballasts, automotive systems, high voltage communications equipment, and power supplies. Its working principles are based on the reverse-bias potential difference between the metal and the semiconductor, which forms a barrier that allows for current to be induced in the external circuit. It has a breakdown voltage of at least 125V, and can handle a maximum recurring peak forward current of 2.0A.