
Allicdata Part #: | GBLA10HD2G-ND |
Manufacturer Part#: |
GBLA10HD2G |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | BRIDGE RECT 1PHASE 1KV 4A GBL |
More Detail: | Bridge Rectifier Single Phase Standard 1kV Through... |
DataSheet: | ![]() |
Quantity: | 1000 |
1200 +: | $ 0.22176 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 1kV |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 4A |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, GBL |
Supplier Device Package: | GBL |
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Diodes - Bridge Rectifiers
Bridge rectifiers are used in many applications, from AC to DC conversion to voltage regulation in power supplies. The GBLA10HD2G is a diode bridge rectifier designed specifically for use in high-power applications, such as high-power motors, high-power inverters, and high-power amplifiers. The GBLA10HD2G is designed and manufactured according to a strict quality assurance system, and is compliant with the ISO 9001 Quality Assurance and ISO/TS 16949 standards.
Application Field
The GBLA10HD2G bridge rectifier is ideally suited to applications where high power and reliability are essential. This rectifier is capable of providing peak current ratings up to 15 amps at up to 70°C temperatures. It is ideal for use in high-power motor drives and inverters, automotive fire suppression systems, and high-power converters and amplifiers. The GBLA10HD2G rectifier also has a low forward-voltage drop, and an excellent thermal response, which makes it especially suitable for use in high-power applications. Furthermore, the GBLA10HD2G rectifier is designed to be exceptionally reliable, and can withstand up to 25kV isolation voltage.
Working Principle
The GBLA10HD2G bridge rectifier operates on a four layer semiconductor substrate, with a p-type and n-type material making up the two terminal pairs. The four semiconductor layers are insulated from each other, with the Anode being connected to the n-type material, and the Cathode being connected to the p-type material. When the voltage across the Anode and Cathode of the rectifier exceeds the forward threshold voltage, current flows across the p-n junction, allowing current to pass through the device. This allows the device to convert alternating current to direct current, and to regulate voltage drops across the device.
The GBLA10HD2G bridge rectifier is designed to handle high power applications, and to ensure this, it is hermetically sealed and made of high-links material. The GBLA10HD2G rectifier is also designed to be highly efficient, with a low forward voltage drop, and a high thermal response. These features make the GBLA10HD2G ideal for use in high power applications such as motors, inverters, and amplifiers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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GBLA04-E3/45 | Vishay Semic... | 0.4 $ | 1000 | DIODE GPP 1PH 4A 400V GBL... |
GBLA08-M3/45 | Vishay Semic... | 0.43 $ | 1000 | BRIDGE RECT 4A GPP 800V G... |
GBLA01 D2G | Taiwan Semic... | 0.18 $ | 1000 | BRIDGE RECT 1PHASE 100V 4... |
GBLA01HD2G | Taiwan Semic... | 0.2 $ | 1000 | BRIDGE RECT 1PHASE 100V 4... |
GBLA10HD2G | Taiwan Semic... | 0.25 $ | 1000 | BRIDGE RECT 1PHASE 1KV 4A... |
GBLA08-E3/45 | Vishay Semic... | 0.4 $ | 1000 | DIODE GPP 1PH 4A 800V GBL... |
GBLA005-E3/45 | Vishay Semic... | 0.4 $ | 1000 | DIODE GPP 1PH 4A 50V GBLB... |
GBLA02HD2G | Taiwan Semic... | 0.2 $ | 1000 | BRIDGE RECT 1PHASE 200V 4... |
GBLA06-E3/51 | Vishay Semic... | -- | 1000 | DIODE GPP 1PH 4A 600V GBL... |
GBLA01-E3/51 | Vishay Semic... | 0.42 $ | 1000 | DIODE GPP 1PH 4A 100V GBL... |
GBLA06 D2G | Taiwan Semic... | 0.18 $ | 1000 | BRIDGE RECT 1PHASE 600V 4... |
GBLA08-E3/51 | Vishay Semic... | 0.42 $ | 1000 | DIODE GPP 1PH 4A 800V GBL... |
GBLA10-E3/51 | Vishay Semic... | 0.42 $ | 1000 | DIODE GPP 1PH 4A 1000V GB... |
GBLA005 D2G | Taiwan Semic... | 0.18 $ | 1000 | BRIDGE RECT 1PHASE 50V 4A... |
GBLA06-M3/51 | Vishay Semic... | 0.49 $ | 1000 | BRIDGE RECT 4A GPP 600V G... |
GBLA04 D2G | Taiwan Semic... | 0.18 $ | 1000 | BRIDGE RECT 1PHASE 400V 4... |
GBLA08-M3/51 | Vishay Semic... | 0.43 $ | 1000 | BRIDGE RECT 4A GPP 800V G... |
GBLA01-E3/45 | Vishay Semic... | 0.4 $ | 1000 | DIODE GPP 1PH 4A 100V GBL... |
GBLA06HD2G | Taiwan Semic... | 0.2 $ | 1000 | BRIDGE RECT 1PHASE 600V 4... |
GBLA10-M3/51 | Vishay Semic... | 0.43 $ | 1000 | BRIDGE RECT 4A GPP 1000V ... |
GBLA08HD2G | Taiwan Semic... | 0.25 $ | 1000 | BRIDGE RECT 1PHASE 800V 4... |
GBLA005-E3/51 | Vishay Semic... | 0.42 $ | 1000 | DIODE GPP 1PH 4A 50V GBLB... |
GBLA04-E3/51 | Vishay Semic... | 0.42 $ | 1000 | DIODE GPP 1PH 4A 400V GBL... |
GBLA02-E3/45 | Vishay Semic... | 0.4 $ | 1000 | DIODE GPP 1PH 4A 200V GBL... |
GBLA10-E3/45 | Vishay Semic... | 0.4 $ | 1000 | DIODE GPP 1PH 4A 1000V GB... |
GBLA08 D2G | Taiwan Semic... | 0.22 $ | 1000 | BRIDGE RECT 1PHASE 800V 4... |
GBLA02 D2G | Taiwan Semic... | 0.18 $ | 1000 | BRIDGE RECT 1PHASE 200V 4... |
GBLA04HD2G | Taiwan Semic... | 0.2 $ | 1000 | BRIDGE RECT 1PHASE 400V 4... |
GBLA06-M3/45 | Vishay Semic... | 0.43 $ | 1000 | BRIDGE RECT 4A GPP 600V G... |
GBLA10 D2G | Taiwan Semic... | 0.22 $ | 1000 | BRIDGE RECT 1PHASE 1KV 4A... |
GBLA02-E3/51 | Vishay Semic... | 0.42 $ | 1000 | DIODE GPP 1PH 4A 200V GBL... |
GBLA005HD2G | Taiwan Semic... | 0.2 $ | 1000 | BRIDGE RECT 1PHASE 50V 4A... |
GBLA06-E3/45 | Vishay Semic... | 0.4 $ | 1000 | DIODE GPP 1PH 4A 600V GBL... |
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