GD25S512MDFIGR Allicdata Electronics
Allicdata Part #:

1970-1078-2-ND

Manufacturer Part#:

GD25S512MDFIGR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I...
DataSheet: GD25S512MDFIGR datasheetGD25S512MDFIGR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP
Description

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GD25S512MDFIGR (GD25S512MD) is a high-temperature, high-humidity, and high-hygroscopicity memory device that is typically used in automotive and industrial applications. It is a type of non-volatile memory that can be used for a variety of purposes, such as data logging, process control, and fault-tolerant applications. In this article, we will explore the application field and working principles of GD25S512MD.

Application Field: GD25S512MD is a high-temperature, high-humidity, and high-hygroscopicity memory that is ideal for use in automotive, industrial and other applications with harsh environmental conditions. Because of its superior mechanical and electrical characteristics, this memory device is well-suited for use in harsh environments, such as those experienced in the automotive, aerospace and military industries. Additionally, this memory device features a low power consumption, making it suitable for applications that require low-power operation such as real-time clocks and instrumentation systems. Furthermore, this memory device has the capability to retain data even at high temperatures, with its maximum operating temperature specified at +125 °C.

Working Principle:GD25S512MD utilizes a non-volatile memory known as ferroelectric random access memory (FRAM), which is a non-volatile memory technology based on ferroelectric materials. The memory is “programmed” using pulses of electric fields, which cause the ferroelectric material to switch between two different states, and when the pulses cease, the material retains the state it was in at the time. This means that data is stored even when the power is off. Data can be read back from the memory using a simple write-read mechanism.

In addition to its non-volatile memory technology, GD25S512MD utilizes an array of novel technologies such as a low-power and automated power management, multiple array configurations, fast data read and write speeds and a low-voltage operation. Furthermore, this memory device also features a write-enable, read-disable, write-and-protect, and read-only modes for additional security.

The GD25S512MD is an ideal choice for applications where data and program storage requirements are critical and environmental conditions are harsh. This memory device features superior performance in both high-temperature, high-humidity and high-hygroscopicity applications. Additionally, the GD25S512MD has low power consumption which makes it suitable for a wide range of potential applications.

The specific data is subject to PDF, and the above content is for reference

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