GD25LD80CEIGR

GD25LD80CEIGR is a type of non-volatile memory in the form of electrically erasable programmable read-only memory (EEPROM). It is designed to provide an electrically erasable and reprogrammable memory solution with no external programming voltage and ultra-low power consumption. The device is available in both 2.7 V to 3.6 V and 1.8 V to 3.6 V versions.

GD25LD80CEIGR Application Field

GD25LD80CEIGR is widely used for a large range of applications. It is employed in consumer as well as automotive electronics, industrial automation and communication systems. It is suitable for storing any data that needs to be stored non-volatile, such as system parameters, system software, operating system and applications.}

GD25LD80CEIGR Working Principle

The GD25LD80CEIGR is a non-volatile memory that allows for the storage of data that persists even when the power source is removed. The device works on the principle of storing electrical charges on capacitors. The memory cell consists of a floating-gate metal-oxide-semiconductor field-effect transistor (MOSFET) connected to two select gates. This transistor structure is designed to store charges on the floating gate, which serves as the memory element. When a charge is written to this element, it becomes trapped there, and it will remain until it is discharged. The device is capable of carrying out erase, write, and read operations on the memory cells via the control signals provided to its select gates. An advantage of the GD25LD80CEIGR memory compared to other non-volatile memories is its ability to operate at low power, since it does not require an extra programming voltage.

The GD25LD80CEIGR can be used as an ideal solution for non-volatile data storage, due to its advantages in terms of low power consumption, no external programming voltage required for write and erase operations, and high cycle endurance. Additionally, its wide operating voltage range allows the device to be used in a variety of applications, making it versatile and popular.