GD25VQ40CEIGR Allicdata Electronics
Allicdata Part #:

GD25VQ40CEIGR-ND

Manufacturer Part#:

GD25VQ40CEIGR

Price: $ 0.29
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 4Mb (512K x 8) SPI - Quad I/...
DataSheet: GD25VQ40CEIGR datasheetGD25VQ40CEIGR Datasheet/PDF
Quantity: 1000
9000 +: $ 0.26100
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)
Description

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The GD25VQ40CEIGR Memory is a type of device used in many electronic circuits and applications. It is a highly integrated and reliable memory device that has many advantages over conventional flash memories.

The GD25VQ40CEIGR Memory consists of an array of four 4M-bit memory cells, which are organized as two 128K words x 16 bits. The device is capable of providing single or dual 16-bit data bus functions and offers several integrated features, including an OTP (One Time Programmable) cell, a mode-sequencing feature, output data buffering and a temperature-compensated temperature-sensor. The device also offers a programmable-reset feature and an optional power-on-reset (POR) function.

The GD25VQ40CEIGR Memory is optimized for robust operation in industrial and automotive applications. The device is designed to provide high reliability and is extensively qualified for use in harsh environments. The GD25VQ40CEIGR Memory offers a wide range of features and performance capabilities, including fast access times, high endurance, low power consumption and superior thermal characteristics.

The primary application field for the GD25VQ40CEIGR Memory is in industrial and automotive embedded memory applications, such as engine control units, automotive infotainment systems and automotive safety systems. The device is also used in a wide range of other applications, including medical device, medical imaging and industrial product instrumentation.

The working principle of the GD25VQ40CEIGR Memory involves the usage of the on-chip memory cell array. When data is written to the memory cells, an internal write controller decodes the address and data values and then proceeds to provide the write operations to the associated memory cells. During read operations, a decoder is triggered to interpret the address and bring out the appropriate data values. This process is repeated continuously until the desired amount of data has been read or written.

The GD25VQ40CEIGR Memory can also be used in combination with other memories or devices, such as NAND or NOR Flash memory, EEPROMs or DRAMs. Such combinations offer a variety of functions and performance benefits, including fast access times, high endurance and lower power consumption. With its wide range of integrated features and flexibility, the GD25VQ40CEIGR Memory provides an ideal choice for embedded memory applications in a variety of markets.

The specific data is subject to PDF, and the above content is for reference

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