Allicdata Part #: | 1560-1016-5-ND |
Manufacturer Part#: |
GDP08S120A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | DIODE SCHOTTKY 1.2KV 8A TO220-2 |
More Detail: | Diode Silicon Carbide Schottky 1200V 8A Through Ho... |
DataSheet: | GDP08S120A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Amp+™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 100µA @ 1200V |
Capacitance @ Vr, F: | 477pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 135°C |
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GDP08S120A is a kind of single rectifier diodes. It is mainly used in low-frequency rectification and offers high surge capability for high voltage and high frequency rectification. It also features low conduction (on-state) loss, low power consumption and wide temperature range.
GDP08S120A is applicable to various fields such as power supply circuits, DC-DC converters, automotive electronics, converters and welding machines. It provides a unique combination of low conduction and switching loss, wide temperature range and high frequency capability.
From a working principle standpoint, a diodes works by falling into two categories: rectification and voltage-regulation. Rectification involves using diodes to convert AC voltage into DC voltage, while voltage regulation is used to control and maintain the voltage at a certain value.
The structure of the GDP08S120A rectifier diode is fairly simple, consisting of two regions and a PN junction. The PN junction is formed by introducing impurities into either side of a semiconductor. A rectifier diode consists of a P-type and N-type semiconductor material. The N-type region has excess electrons, while the P-type region has a higher concentration of holes.
The current flow of the diode is dependent upon the voltage applied to it. When the applied voltage of a diode is positive, the electrons in the N-type region can easily cross the PN junction barrier and the diode is in forward-biased, allowing the current to flow. On the other hand, when the voltage is reversed, the electrons cannot easily cross the PN junction barrier and the current flow is blocked, putting the diode into reverse-biased mode, although some leakage current can still flow.
The forward and reverse voltage ratings are important factors to consider when selecting a diode. The forward voltage rating specifies the highest voltage allowed to be applied to the diode in the forward biasing direction, and the reverse voltage rating specifies the highest voltage allowed when the diode is in the reverse biasing direction.
The main characteristics of the GDP08S120A rectifier include the low forward voltage drop, low leakage current and high surge capability. The low forward voltage drop reduces the period of time the diode is in the forward conduction mode, thus reducing power loss. The high surge capability of the diode is an essential feature, as it allows it to withstand high frequency and high voltage pulses, making it suitable for DC-DC converters. The diode also offers low leakage current, providing significant protection from electrical shorts.
In conclusion, the GDP08S120A rectifier diode is a cost-effective and reliable solution for low-frequency rectification, as well as for high voltage and high frequency rectification. It features low power consumption, low forward voltage drop and high surge capability, allowing it to be used in a wide range of applications. The diode also offers low leakage current, providing significant protection from electrical shorts.
The specific data is subject to PDF, and the above content is for reference
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