GF1G Allicdata Electronics

GF1G Discrete Semiconductor Products

Allicdata Part #:

GF1GFSTR-ND

Manufacturer Part#:

GF1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 400V 1A SMA
More Detail: Diode Standard 400V 1A Surface Mount SMA (DO-214AC...
DataSheet: GF1G datasheetGF1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: GF1G
Description

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GF1G Application Field and Working Principle

GF1G series rectifier diode is a kind of ultrafast silicon epitaxial planar recovery diode, which can be used to provide fast switchover with low forward voltage drop. It has high efficiency, low Vf and low temperature dependence, and fast switching of the resistor. It is a suitable choice for the power supply of many kinds of electronic products such as telephone and TV sets. Moreover, it can also be used in the driver circuit and power rectifier of power switching circuit.

The GF1G diode has a PN junction structure with a silicon epitaxial planar substrate.This device utilizes a combination of vertical and lateral diffusion to achieve low leakage and fast switching. Its low reverse leakage current can effectively reduce the power loss during operation and make it more efficient. Its performance can be maintained at high temperature, thus ensuring the safety and responsiveness. In addition, due to its ultrafast characteristics, it is widely used in the switching of pulse circuits.

GF1G series diode has two terminals, an anode and a cathode. The PN junction between the two is the junction between the metal wires that makes up the diode. When the anode of a diode is connected to a higher voltage than the cathode, it will conduct electric current, and the diode is then in the forward bias state. For this diode, its forward on-state resistance is low and the forward voltage drop is low (generally less than 1V). That is to say, through the forward current flow of this diode, the electric energy can be converted into light energy and heat, which makes it applicable in many kinds of DC-DC power converter circuits.

When the anode and the cathode voltage become equal, the current through the GF1G diode will become zero. If the anode is connected with lower potential than the cathode, then the diode will be in reverse bias state and no conduction of current is possible. In this case, the reverse bias voltage must not exceed the maximum reverse breakdown voltage of the diode, otherwise, the diode may be damaged and even burned. Moreover, if the junction capacitance is high, it can cause problems such as current leakage, which may affect the circuit performance.

In summary, the GF1G series rectifier diodes can provide fast switching with low forward voltage drop, which makes them an ideal choice for the rectification of power circuits. They have low on-state resistance and low capacitance, which makes them suitable for power switching in all kinds of electronic applications, especially those where high efficiency, low noise, and low switching time are required.

The specific data is subject to PDF, and the above content is for reference

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