GFR2C32300 Allicdata Electronics
Allicdata Part #:

GFR2C32300-ND

Manufacturer Part#:

GFR2C32300

Price: $ 70.75
Product Category:

Uncategorized

Manufacturer: Altech Corporation
Short Description: EGFP+OL 32A277V AC 300MA C TRIP
More Detail: N/A
DataSheet: GFR2C32300 datasheetGFR2C32300 Datasheet/PDF
Quantity: 1000
1 +: $ 64.31670
Stock 1000Can Ship Immediately
$ 70.75
Specifications
Series: *
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GFR2C32300 is an integrated field-effect transistor (FET). FETs are electronic devices that consist of a source, drain, and gate, which control the transport of electrons between the source and drain. GFR2C32300 is a high-frequency device with an operating frequency of up to 1.5GHz. The device has a typical drain-source saturation voltage of 1.4V and a typical drain-source breakdown voltage of 40V. It is available in an exposed pad (EP) package, which allows for better thermal dissipation.

GFR2C32300 is used in a wide variety of applications ranging from cell phones to power supplies. It is particularly well-suited for radio frequency (RF) applications due to its high operating frequency. It can be used in wireless communication systems, such as Bluetooth, Wi-Fi, and Long Term Evolution (LTE). It can also be used in power amplifiers, filters, and switches in base stations. Additionally, it can be used in voltage-controlled oscillators (VCOs) and mixers in receivers.

The working principle of GFR2C32300 is fairly simple. When the gate voltage is applied, the FET turns on and electrons flow between the source and drain terminals. The resistance between the source and drain depends on the amount of voltage across the gate–drain and gate–source terminals. This resistance is known as the transconductance of the device, which is a measure of the amount of current that can flow between the source and drain for a given gate voltage.

The main advantage of GFR2C32300 is its small size and low power consumption. It is also very reliable and efficient, so it is well suited for high-performance applications. Additionally, it has a low thermal resistance that allows for better heat dissipation. This also allows the FET to operate at higher temperatures than other similar devices.

In summary, GFR2C32300 is an integrated field-effect transistor that can be used in a variety of applications, including wireless communication systems, power amplifiers, and voltage-controlled oscillators. Its main advantages include its small size, low power consumption, and high reliability. It has a low thermal resistance, which allows for better heat dissipation and improved performance at high temperatures.

The specific data is subject to PDF, and the above content is for reference

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