GG0402050R3C2P Allicdata Electronics

GG0402050R3C2P Circuit Protection

Allicdata Part #:

478-10591-2-ND

Manufacturer Part#:

GG0402050R3C2P

Price: $ 0.04
Product Category:

Circuit Protection

Manufacturer: AVX Corporation
Short Description: TVS DIODE 5V 15.5V 0402
More Detail: N/A
DataSheet: GG0402050R3C2P datasheetGG0402050R3C2P Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.03262
30000 +: $ 0.03069
50000 +: $ 0.02878
100000 +: $ 0.02558
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Voltage - Clamping (Max) @ Ipp: 15.5V
Supplier Device Package: 0402 (1005 Metric)
Package / Case: 0402 (1005 Metric)
Mounting Type: Surface Mount
Operating Temperature: 125°C
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 46W
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Series: GiGUARD
Voltage - Breakdown (Min): 7V
Voltage - Reverse Standoff (Typ): 5V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS – Diodes

GG0402050R3C2P Application Field and Working Principle

The GG0402050R3C2P is a very popular type of transient voltage suppression (TVS) diode, which is used in many different types of circuits and devices for over-voltage protection. It is often referred to as a unidirectional or bidirectional diode, depending on its application. The GG0402050R3C2P provides both very high-speed and high-current protection and is used in a wide variety of applications, including: automotive, industrial control, networking, telecom, consumer electronics, and medical devices.

TVS diodes like the GG0402050R3C2P have several advantages over other types of diode protection such as MOVs (metal-oxide varistors) and snap-back diodes. These advantages include: higher reliability, lower transient peak voltage, higher surge-current protection capability, and lower capacitance.

The basic principle of the GG0402050R3C2P can be broken down into three main components: electrical breakdown, space charge, and solid-state rectification. Electrical breakdown occurs when the applied reverse voltage exceeds the gate-source threshold, which is typically around 5–10 V. At this point, the device starts to conduct current and the resulting voltage drop is the breakdown voltage.

Next, space charge starts to develop between the P-N junction. This region is filled with small positive ions that tend to drift and form a mobile space charge across the junction. As the space charge increases, so does the number of carriers that can pass through the junction. This process is known as avalanche multiplication and results in the junction conducting current until the space charge reduces again to its original level.

Finally, solid-state rectification takes place within the device. This is where the device\'s internal semiconductor materials alter their electrical properties to allow current to travel from one side of the diode to the other. This rectification process is a major factor in providing the desired protection.

The specific data is subject to PDF, and the above content is for reference

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