GI1403-E3/45

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	975mV @ 8A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	35ns
Current - Reverse Leakage @ Vr:	5µA @ 150V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-2
Supplier Device Package:	TO-220AC
Operating Temperature - Junction:	-65°C ~ 150°C

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GI1403-E3/45 Rectifier Diode

The GI1403-E3/45 is a rectifier diode specifically developed by AOS Technologies AG. This component has numerous applications in fields related to power conversion and rectification. The GI1403-E3/45 is suitable for applications that require increased power efficiency in DC/DC converters and automotive inverters, such as motor drives, lighting and charging systems. In this article, we will discuss the application field and working principle of the GI1403-E3/45.

Applications

The GI1403-E3/45 is ideal for a wide range of applications that require improved power efficiency and temperature control. It is suitable for use in DC/DC and AC/DC converters, as well as automotive inverters. This component can also be used in motor drives, lighting systems, and charging systems. The GI1403-E3/45 is designed to reduce power loss and energy dissipation and is capable of handling repetitive pulse frequencies of up to 2MHz. Additionally, it features low forward voltage drop, high reverse voltages, and fast switching times.

Working Principle

The GI1403-E3/45 is a rectifier diode that relies on a Schottky Barrier (SB) to convert AC power into DC power. The diode is composed of a PN junction between two semiconductor materials. When the diode is reverse-biased, the current will flow from the anode to the cathode. This process is inhibited by the SB, which increases the voltage drop of the barrier and reduces the forward current. When the diode is forward-biased, the SB is lowered, allowing current to flow from the anode to the cathode.The GI1403-E3/45 is composed of a PN junction between a heavily doped n-type semiconductor and a lightly doped p-type semiconductor. Electrons move freely in the n-type semiconductor while holes move freely in the p-type semiconductor. When the diode is forward-biased, the SB is lowered and electrons move from the n-type semiconductor to the p-type semiconductor, resulting in a DC current flow.The GI1403-E3/45 is capable of handling temperatures up to 175°C and is rated for up to 3A of reverse and 5A forward current. The diode features an ultrafast switching speed, with a maximum reverse recovery time of 25ns. Additionally, the diode is designed to reduce power loss and energy dissipation and is suitable for use in applications that require increased power efficiency.

Conclusion

The GI1403-E3/45 is a rectifier diode specifically developed by AOS Technologies AG. It is designed to reduce power loss and energy dissipation and is capable of handling repetitive pulse frequencies of up to 2MHz. This component is ideal for use in DC/DC and AC/DC converters, as well as automotive inverters. It is also suitable for use in motor drives, lighting systems, and charging systems. The GI1403-E3/45 relies on a Schottky Barrier to convert AC power into DC power. It is rated for up to 3A of reverse and 5A forward current, and is capable of handling temperatures up to 175°C. This component is specifically designed to increase power efficiency in applications where thermal control is necessary.

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