GI754-E3/54 Allicdata Electronics

GI754-E3/54 Discrete Semiconductor Products

Allicdata Part #:

GI754-E3/54GITR-ND

Manufacturer Part#:

GI754-E3/54

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 6A P600
More Detail: Diode Standard 400V 6A Through Hole P600
DataSheet: GI754-E3/54 datasheetGI754-E3/54 Datasheet/PDF
Quantity: 5600
800 +: $ 0.23589
1600 +: $ 0.18871
2400 +: $ 0.17102
5600 +: $ 0.15923
20000 +: $ 0.15726
Stock 5600Can Ship Immediately
$ 0.26
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: GI754
Description

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Diodes are an essential component in any electronic circuits and they form an integral part of the electrical current path. A single diode is a basic two terminal element, either a p-n junction or a Schottky diode, that is responsible for allowing and blocking the flow of current based on its polarity. The GI754-E3/54 single rectifier diode is ideal for a wide range of switching and power rectification applications that require high-frequency and high-current performance.

The GI754-E3/54 is a high frequency, high efficiency, low drop rectifier diode. It is a 150V, 200V Schottky rectifier that is available in various package types including SMA (Surface Mount Assembly), DO-203AB, and TO-247. Ideal for use in switching applications such as AC-dc converters, DC-dc converters, PWM Rectifiers and high frequency transformers, the GI754-E3/54 offers a number of advantageous features including low forward voltage drop, low diode capacitance and excellent thermal stability.

The GI754-E3/54’s working principle is based on the basic principle of voltage-controlled current flow. When a voltage bias is applied to a Schottky diode, a forward bias current is generated. This current flows through the diode and passes the anode terminal to the cathode terminal. The electrons that pass through the diode exhibit minority carrier injection, which means that carriers with a lower energy level (electrons) are expelled from the diode. Consequently, the number of minority carriers in the diode decreases, creating a depletion region at the junction. This depletion region is also known as a minority carrier storage region and acts as a “barrier” to current flow in the opposite direction.

The GI754-E3/54 is designed to be used in various electronic applications. It can be used in switching and power rectification circuits to replace standard rectification diodes and power MOSFETs. This diode is also ideal for AC-DC and DC-DC conversion applications as its low forward voltage drop and low diode capacitance make it ideal for high frequency and high-efficiency operations. The GI754-E3/54 can also be used in high-frequency transformers, PWM rectifiers, and other applications where a high efficiency, low drop rectification is desirable.

The GI754-E3/54 is a great choice for use in many types of applications that require the highest in performance and efficiency. It offers high frequency, low drop power rectification with excellent thermal stability and low forward voltage. This diode is available in SMA, DO-203AB and TO-247 packages, making it highly versatile for use in a wide range of circuit designs.

The specific data is subject to PDF, and the above content is for reference

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