Allicdata Part #: | GI828-E3/54-ND |
Manufacturer Part#: |
GI828-E3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 5A P600 |
More Detail: | Diode Standard 800V 5A Through Hole P600 |
DataSheet: | GI828-E3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 300pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | P600, Axial |
Supplier Device Package: | P600 |
Operating Temperature - Junction: | -50°C ~ 150°C |
Base Part Number: | GI828 |
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Diodes are important components in all electronics designs as they are used to regulate the flow of current in an electrical circuit. As part of the Diode family, rectifiers are a type of diode that are used to convert alternating current (AC) to direct current (DC). There are many different types of rectifiers available and the GI828-E3/54 is one of them.
The GI828-E3/54 is a single rectifier diode that can handle current loads up to 54 Amps and up to 1,000 volts in breakover voltage. It is designed to provide low forward voltage drop, high surge current and low leakage current. This type of rectifier can be used in a range of power conversion applications such as AC-DC converters, solar inverters, DC motor controllers and more.
The GI828-E3/54 rectifier works by using a p-n junction to regulate the flow of current in an electrical circuit. A p-n junction is constructed with two doped semiconductors, a p-type semiconductor material which has an abundance of positive holes and an n-type semiconductor material which has an abundance of negative electrons. When these two materials are brought together, electrons from the n-type material will fill the holes in the p-type material and create an electric field that is called a depletion layer. This electric field acts like a barrier and makes it difficult for electrons to pass from the p-type region to the n-type region.
When an anode voltage higher than the threshold voltage of the diode is applied to the GI828-E3/54, a forward bias current starts flowing through the diode. This current passes through the depletion layer and then passes through the PN junction to the n-type material. This process allows current to flow to the anode and out through the cathode of the diode. When the anode voltage is reversed, the depletion layer blocks the current and the diode is said to be reverse biased.
The GI828-E3/54 rectifier diode is an ideal choice for various applications that require an efficient and cost-effective solution for converting AC to DC. Due to its high surge current and low leakage current, it is suitable for use in applications such as solar inverters, LED lighting, uninterruptible power supplies and more. In addition, its low forward voltage drop allows for greater efficiency in the power conversion process.
In conclusion, the GI828-E3/54 single rectifier diode is a reliable and cost-effective solution for converting AC to DC in a variety of applications. Its low forward voltage drop and high surge current make it suitable for use in a wide range of applications. Furthermore, its ease of use and low cost make it a preferred choice for many electronic designs.
The specific data is subject to PDF, and the above content is for reference
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