GMM3X100-01X1-SMD Allicdata Electronics
Allicdata Part #:

GMM3X100-01X1-SMD-ND

Manufacturer Part#:

GMM3X100-01X1-SMD

Price: $ 13.27
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 6N-CH 100V 90A 24-SMD
More Detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 90A...
DataSheet: GMM3X100-01X1-SMD datasheetGMM3X100-01X1-SMD Datasheet/PDF
Quantity: 1000
28 +: $ 12.05950
Stock 1000Can Ship Immediately
$ 13.27
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD
Description

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A GMM3X100-01X1-SMD or "Gates Mosfet Array" is a type of transistor array manufactured by Microsoft-Intel Corporation for applications that require high voltage, high speed and/or low power. It consists of a single chip which holds four transistors in a single package, configured as an array of independent Gatesmosfets. Each Gatesmosfet is formed from three layers, one layer of semiconductor material, one layer of metal and one layer of dielectric material.

The application fields of the GMM3X100-01X1-SMD include but are not limited to: battery management systems (BMS), inverters, power converters and controllers, low-noise amplifiers, high-voltage switching, energy storage systems (ESS) and power-on reset (POR). This type of chip is also ideal for use in telecommunications, computing systems and other applications where low voltage and high current are required.

The principles of operation are relatively simple. A gate driver inside the chip is powered from a voltage source. This driver activates the gates of the Gatesmosfets, allowing current to flow through them. The gates act as switches, controlling the flow of current by regulating the voltage on the gates. As the gates are open, the voltage across them will be reduced, turning them off and stopping the current flow. When the gates are closed, the voltage on the gates will be increased, turning them on and allowing current to flow.

The benefit of using the GMM3X100-01X1-SMD is that the combination of transistors in a single package provides greater control and accuracy. This enables it to be employed in a wide range of applications, requiring higher precision without sacrificing power consumption. The Gatesmosfet Array is also well suited to providing a large current drive, while simultaneously exhibiting excellent gain and response times.

Overall, the GMM3X100-01X1-SMD is a useful device which offers excellent performance, low power consumption and improved board density. It can provide a cost-effective and efficient solution for many industrial and consumer applications. As a result, it is increasingly being used in a wide variety of embedded systems, portable electronics and signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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