GMM3X100-01X1-SMDSAM

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	6 N-Channel (3-Phase Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	90A
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	--
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	24-SMD, Gull Wing
Supplier Device Package:	24-SMD

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<h2>GMM3X100-01X1-SMDSAM Application Field and Working Principle</h2><p>The GMM3X100-01X1-SMDSAM is an advanced transistor array designed to be functional in digital, analog and mixed-signal systems. It is a dual-gate MOSFET array in a standard SMD package. It consists of six N-Channel MOSFETs, three source/drain regions, and two gates. Each gate is activated separately from the other, allowing for various independent applications. The GMM3X100-01X1-SMDSAM is available in surface-mount and through-hole varieties.</p><h3>Application Field</h3><p>The GMM3X100-01X1-SMDSAM is primarily used in high speed switching applications, such as power management for RF systems, LED drive circuits, and high speed digital systems. It can be used as a buffer amplifier, power line switch, or a general purpose amplifier. The device can also be used as a low capacitance level shifter in digital signal isolation applications.</p><h3>Working Principle</h3><p>The GMM3X100-01X1-SMDSAM\'s MOSFETS use a double-layer gate structure that consists of a control gate and a floating gate. The control gate is activated by the input signal that is applied to the gate, allowing current to flow from the source to the drain. The floating gate provides an electrical insulation layer that increases the overall device performance and lowers its on-state resistance. When the input signal is applied to one of the gates, the other gate can be used to control the charge stored on the floating gate, thus controlling the drain current.</p><p>The GMM3X100-01X1-SMDSAM can be used in various applications due to its dual-gate MOSFETS and unique configuration. The device has low on-state resistance, low saturation voltage and low charge leakage rate, making it suitable for high speed switching and low capacitance signal isolation applications. The device also features high dV/dT and thermal stability and excellent temperature compensation.</p>

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