GMM3X180-004X2-SMDSAM Allicdata Electronics
Allicdata Part #:

GMM3X180-004X2-SMDSAM-ND

Manufacturer Part#:

GMM3X180-004X2-SMDSAM

Price: $ 15.62
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 6N-CH 40V 180A 24-SMD
More Detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 40V 180A...
DataSheet: GMM3X180-004X2-SMDSAM datasheetGMM3X180-004X2-SMDSAM Datasheet/PDF
Quantity: 1000
1 +: $ 14.20020
Stock 1000Can Ship Immediately
$ 15.62
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD
Description

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The GMM3X180-004X2-SMDSAM belongs to a family of FETs, MOSFETs and arrays. It is a 4 channel high voltage MOSFET array with integrated diodes and has a typical fast switching time of 9ns. This array has a single common gate output and is capable of providing a high frequency operation with low EMI emission. This device is ideal for high-frequency, low-power applications such as in electric vehicles and smart lighting systems.

The GMM3X180-004X2-SMDSAM is a high voltage low-power MOSFET that provides high switching performance with a low voltage drop. This MOSFET is built with a power semiconductor process that includes a low capacitance gate dielectric. This combination provides high performance over a wide range of temperatures, reducing the need for additional cooling and allowing for a reliable operation. This MOSFET array also provides flexibility in its packages, ranging from a single chip to multiple chips.

The GMM3X180-004X2-SMDSAM is designed for high-efficiency applications and supports up to 180V operating voltage. This device works with a wide range of logic levels, making it ideal for high-speed switching applications. Additionally, the high performance of this device helps maintain low detect current levels and reduce dynamic power losses. The GMM3X180-004X2-SMDSAM is capable of operating over a wide range of power supply voltages and temperatures, making it ideal for high-temperature environments.

The GMM3X180-004X2-SMDSAM works by using metal-oxide-semiconductor (MOS) technology. This technology uses metal gate electrodes with a gate dielectric to form transistors. The current flow through the MOS transistor depends on the gate voltage. Thus, when the gate voltage is applied, it modulates the current flowing through the device. This device is also capable of providing a high switching speed when compared to other MOSFETs, making it ideal for high-speed applications.

The GMM3X180-004X2-SMDSAM provides flexibility in its packages and is fully RoHS compliant. This device has integrated ESD protection to protect against electrostatic discharge. Additionally, this device is RoHS compliant and is available in both through-hole and surface-mount packages. The device is also designed for robust operation in low-power applications, providing low-noise operation in audio and video systems.

The GMM3X180-004X2-SMDSAM has many advantages over other FETs, MOSFETs and arrays. Its design provides flexibility in the packages and achieves high-efficiency operation. Additionally, its low-voltage operation means that it can be used in a wide range of applications. Its fast switching time makes it an ideal choice for high-speed, low-power applications, including electric vehicles and lighting systems.

The specific data is subject to PDF, and the above content is for reference

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