Allicdata Part #: | GP15JHE3/73-ND |
Manufacturer Part#: |
GP15JHE3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1.5A DO204AC |
More Detail: | Diode Standard 600V 1.5A Through Hole DO-204AC (DO... |
DataSheet: | GP15JHE3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3.5µs |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-204AC (DO-15) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | GP15J |
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GP15JHE3/73 Diodes - Rectifiers - Single & Working Principle
The GP15JHE3/73 is a silicon-controlled rectifier (SCR) diode with a trigger gate, commonly referred to as a thyristor. The diode is specifically designed for applications in power electronics from DC to 20kHz and is suitable for use with silicon, gallium arsenide, and other semiconductor material.
The GP15JHE3/73 is a three-layer device utilizing a PNPN structure with two anode and two cathode terminals. The two anode terminals are A1 and A2 while the two cathodes are C1 and C2. The gate terminal is simply connected to the anode through an internal gate resistance Rsg. The anode and cathode terminals are designed to withstand an operating temperature range of -40C to +125C and a storage temperature range of -55C to +150C.
The GP15JHE3/73 has a superior rated off-state voltage of 200V and a blocking voltage of 6000V. It also provides good surge and short-circuit protection stated at 1200A. With excellent thermal management design, the device can handle a maximum junction temperature of 125°C and a thermal resistance junction-to-ambient of 27°C/W.
When it comes to the working principle of the GP15JHE3/73, it operates by applying a positive gate voltage in order to switch the device on. This positive gate voltage forces the cathode current to flow through the gate resistance, changing the SCR’s state from non-conducting to conducting, thus allowing the device to conduct a larger current. The larger the gate voltage is, the higher current the unit will be able to take. Once the gate voltage is removed, the device immediately turns off. Moreover, it works in a variety of different modes, including reverse-blocking, inverse-blocking, triac, phase control, and several others.
The GP15JHE3/73 is mainly used in the rectification, protection, and switching of high-power electronic systems. Its largest field of application is power electronics, such as in motor controllers, lighting, robotic systems, welding controllers, industrial automation, and other industrial machinery. Additionally, the GP15JHE3/73 is used for electrical power conversion and distributed power control.
The GP15JHE3/73 rectifier diode has an excellent combination of high-current and voltage capability, reverse-recovery time, surge, and short-circuit protection and good design for thermal management. Its application field and working principle make it suitable for use in high-power electronic systems.
The specific data is subject to PDF, and the above content is for reference
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GP15JHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1.5A ... |
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GP15D-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1.5A ... |
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