GS1D-TP Discrete Semiconductor Products |
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Allicdata Part #: | GS1D-TPTR-ND |
Manufacturer Part#: |
GS1D-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 200V 1A DO214AC |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AC (HSM... |
DataSheet: | GS1D-TP Datasheet/PDF |
Quantity: | 57000 |
3000 +: | $ 0.03804 |
6000 +: | $ 0.03308 |
15000 +: | $ 0.02812 |
30000 +: | $ 0.02646 |
75000 +: | $ 0.02481 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (HSMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | GS1D |
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GS1D-TP is a type of single diode rectifier which is specifically designed for the application of high temperature power semiconductor devices. It is mainly used in thyristors, IGBTs and other devices that require overtemperature protection. The rectifier works to protect the device from overvoltage and overcurrent, and can be used in short-circuit and open-circuit applications. The device features an integrated thermal sensing module to detect the temperature of the device, as well as an integrated temperature alarm module to trigger shutdown when the device reaches its set temperature limit.
The GS1D-TP rectifier utilizes a series of PN junction diodes connected in parallel, allowing the device to control the current flow while the rectifier is in the voltage mode. The device operates by allowing the diode to become forward biased, then applying a negative gate voltage. This enhances the doping level, creating a barrier to the current flow, which is then followed by the diode becoming reverse biased, resulting in the flow of current being blocked. The rectifier also includes an over temperature protection feature, which works to shut down the device in case of over temperature.
The GS1D-TP rectifier utilizes a high temperature bond wire to ensure reliable operation at high temperatures, which is typically greater than 200°C. The device also has an integrated thermal sensing module, which provides the user with a reliable way to detect the temperature of the device and avoid damage from over temperature. The rectifier also features an over-voltage and over-current protection feature, which helps to keep the device from being damaged due to excessive current. Additionally, the rectifier features a short-circuit and open-circuit protection feature, which helps to protect the device from being damaged due to short circuiting or open circuiting.
The GS1D-TP rectifier is an ideal choice for applications requiring high temperature and high power semiconductors. The device is easy to use and is capable of providing reliable and efficient protection in applications where over temperature and over current protection are required. The device is also reliable and durable, offering a longer operating life than many other rectifiers.
In summary, the GS1D-TP is a type of single diode rectifier which is specifically designed for the application of high temperature power semiconductor devices. The rectifier works to protect the device from overvoltage and overcurrent, and can be used in short-circuit and open-circuit applications. The device features an integrated thermal sensing module to detect the temperature of the device, as well as an integrated temperature alarm module to trigger shutdown when the device reaches its set temperature limit. Additionally, the device also features an over-voltage and over-current protection feature, as well as a short-circuit and open-circuit protection feature. The rectifier is an ideal choice for applications requiring high temperature and high power semiconductors, and is reliable in operation.
The specific data is subject to PDF, and the above content is for reference
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