GS1K-TP Discrete Semiconductor Products

GS1K-TP is a rectifier diode with a rated reverse-blocking voltage of 1000V and a peak forward current of 2A. It is mainly used in switching power circuits and output circuits, such as PFC (Power Factor Correction) circuits, and in controlling static relay or electromagnetic relays. With a low forward voltage drop, GS1K-TP can work with limited dissipation loss under high power conditions and surges. The working principle of GS1K-TP is based on classical electronic engineering fundamentals. In forward bias, electrons flow from the anode side to the P-N junction and produces electric current. On the opposite direction, when the diode is reverse biased, the P-N junction is formed like a forward biased diode only the current is blocked due to the reverse breakdown voltage. This can be explained by the avalanche breakdown effect, which is caused by the accelerated electrons on the electric field. GS1K-TP can be used in various applications such as AC-DC converters, energy storage circuits, dynamic braking, solar roof charging and lightning protection circuits. Additionally, these diodes can also be used in high speed rectification and to control operating signals in AI, IO and SCADA applications. Finally, GS1K-TP can also be used as filters in voltage sensitive circuits for monitoring or controlling signals. In conclusion, GS1K-TP rectifier diodes are an essential component for power semiconductor and power systems. They are a reliable and long lasting diode mainly used in high current applications due to its low forward voltage drop and can be used in a wide range of applications.