GS1ME-TP Discrete Semiconductor Products |
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Allicdata Part #: | GS1ME-TPMSTR-ND |
Manufacturer Part#: |
GS1ME-TP |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 1KV 1A DO214AC |
More Detail: | Diode Standard 1000V 1A Surface Mount DO-214AC (SM... |
DataSheet: | GS1ME-TP Datasheet/PDF |
Quantity: | 18000 |
6000 +: | $ 0.02520 |
12000 +: | $ 0.02142 |
30000 +: | $ 0.02016 |
60000 +: | $ 0.01890 |
150000 +: | $ 0.01638 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | GS1ME |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A GS1ME-TP is a type of rectifier diode. It is based on an array of gallium arsenide field-effect transistors (GaAsFETs) connected in series to form a high-speed switch. It is designed for high-speed applications and is used in a variety of electronic devices, such as switching power supplies, LED drivers, and RF power amplifiers. The main advantage of the GS1ME-TP is its low voltage drop and low switching losses, which make it much more efficient than traditional rectifiers. It also has a fast reverse recovery time, which means that it can quickly respond to changes in voltage. The working principle of the GS1ME-TP is simple. It consists of a series of GaAsFETs connected in series. When the voltage across two terminals is the same, the device switches off, due to the presence of a Schottky barrier at the junction between the two transistors. When the voltage across the two terminals is different, the device switches on, allowing current to flow. The high gain of the GaAsFET device enables it to switch quickly and efficiently, meaning that it can respond to changes in voltage quickly. This makes it ideal for use in applications such as power supplies and LED drivers, where fast power switching is required. The GS1ME-TP rectifier diode is also highly tolerant of current surges, making it suitable for use in applications such as defibrillators, where fast power switching is essential. Furthermore, it is capable of withstanding high temperatures, which makes it suitable for use in applications such as medical and military applications, where high temperatures are encountered.In conclusion, the GS1ME-TP is an efficient, competitively priced, and robust rectifier diode. Its fast reverse recovery time makes it ideal for use in fast switching applications such as power supplies, LED drivers, and RF power amplifiers. Its high surge tolerance makes it suitable for use in medical and military applications, where fast switching is essential. Finally, its ability to withstand high temperatures makes it suitable for use in more extreme environments, making it a versatile and reliable rectifier diode.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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GS1ME-TP | Micro Commer... | 0.03 $ | 18000 | DIODE GEN PURP 1KV 1A DO2... |
GS1MTR | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A SMA... |
GS1M-LTP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GS1MFL-TP | Micro Commer... | 0.03 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GS1M | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GS1M-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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