Allicdata Part #: | GS2Y-LTPMSTR-ND |
Manufacturer Part#: |
GS2Y-LTP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GP 1.6KV 1.5A DO214AC |
More Detail: | Diode Standard 1600V 1.5A Surface Mount DO-214AC (... |
DataSheet: | GS2Y-LTP Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.03572 |
15000 +: | $ 0.03175 |
37500 +: | $ 0.02977 |
52500 +: | $ 0.02646 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single: GS2Y-LTP Application Field and Working Principle
The GS2Y-LTP, or the SiC Schottky diodes from the GS2Y-LTP series, is a popular Silicon Carbide (SiC) junction diode. These types of diodes are used in a variety of applications, and are particularly well suited for high-voltage and high-current power designs as they provide superior efficiency compared to traditional Silicon-based diodes. SiC Schottky diodes can handle extremely large voltage swings, and their low forward voltage drops make them ideal for improving power-conversion efficiency. The GS2Y-LTP series, in particular, is ideal for applications where fast switching times are required, such as high-frequency DC/DC converters.
Due to their wide range of applications, the SiC Schottky diodes from the GS2Y-LTP series must be built to meet certain standards. Their electrical characteristics must be carefully measured and analyzed before the diode is released for commercialization. Additionally, their surface mount package is designed to ensure optimal electrical performance, protection against high voltage, and efficient heat dissipation.
The working principle of GS2Y-LTP SiC Schottky diodes is based on the phenomenon of electron tunnelling through the energy barrier between the metal and the semiconductor. As electrons enter the SiC structure, they do not need to be activated via thermal excitation, which is necessary with traditional Si-based diodes. As a result, the electrical losses associated with conventional rectifiers are reduced, and switching times are significantly increased. This improved performance is particularly advantageous in applications where high switching frequencies are required.
The GS2Y-LTP SiC Schottky diodes have a plethora of important application fields, such as in the field of automotive electronics, automotive propulsion systems, and the aerospace industry. The diodes are also used in home appliances, solar energy systems, and various industrial fields. Due to their excellent performance and enhanced efficiency, these diodes are becoming increasingly popular for use in various field applications.
Given the GS2Y-LTP diode’s high efficiency, small size, and cost-effective price, it is clear why the diode is the number one choice for many desirable power designs. With their wide range of applications, the GS2Y-LTP SiC Schottky diodes are one of the most popular types of diodes available on the market today.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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GS2Y-LTP | Micro Commer... | 0.04 $ | 1000 | DIODE GP 1.6KV 1.5A DO214... |
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