| Allicdata Part #: | GT10J312(Q)-ND |
| Manufacturer Part#: |
GT10J312(Q) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | IGBT 600V 10A 60W TO220SM |
| More Detail: | IGBT 600V 10A 60W Surface Mount TO-220SM |
| DataSheet: | GT10J312(Q) Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | 0.00000 |
| Power - Max: | 60W |
| Base Part Number: | GT10 |
| Supplier Device Package: | TO-220SM |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Reverse Recovery Time (trr): | 200ns |
| Test Condition: | 300V, 10A, 100 Ohm, 15V |
| Td (on/off) @ 25°C: | 400ns/400ns |
| Input Type: | Standard |
| Switching Energy: | -- |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 10A |
| Current - Collector Pulsed (Icm): | 20A |
| Current - Collector (Ic) (Max): | 10A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The GT10J312(Q) is a general purpose, isolated IGBT module, with single transistor output. It has been specifically designed to provide a high current, low voltage output, in order to reduce the risk of short circuits. This guaranteed safety makes it a great choice for applications in power electronics, automotive, and energy.The IGBT is a three-terminal power device, in which the gate terminals are connected to a power transistor and the source and drain terminals are connected to the output. The IGBT has two main advantages over conventional power transistors: it is far more efficient, and can be easily packaged into a module or board.The IGBT is similar to a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), but has a better on-state current handling capability. This is because it has a higher collector-to-emitter breakdown voltage when compared to a MOSFET, meaning it can carry more current at higher voltages.The key advantage of IGBTs is their high switching speed, which is the time required to switch from a full-on state to a full-off state. This makes them ideal for fast opto-coupled feedbacks and motor controls.Another advantage of IGBTs is their significantly lower voltage drop compared to MOSFETs. This is because IGBTs have a lower on-state voltage drop than MOSFETs. This means they consume less power and are more efficient than MOSFETs.The GT10J312(Q) has a continuous drain current of 10A, so it is well suited for applications in power electronics. It also offers a large voltage range, with a maximum peak voltage of 400V and a maximum reverse voltage of 200V. This makes it ideal for motor control applications.This IGBT module offers a high degree of isolation between its gate, source and drain terminals, so it is well suited for noise-sensitive applications. It also does not require a gate driver, making it a cost effective solution for power electronics applications.The GT10J312(Q) uses a n-type IGBT, which allows for much better dissipation of heat and a smaller thermal resistance than other IGBTs. This makes it well suited for high temperature applications.In conclusion, the GT10J312(Q) is a great choice for applications in power electronics, automotive and energy. It has a high current output and a wide voltage range, making it suitable for a variety of applications. Its high switching speed and lower voltage drop make it ideal for motor control applications, and its high isolation makes it suitable for noise-sensitive applications. It’s also a cost effective solution, since it does not require a gate driver. Furthermore, its n-type IGBT allows for better heat dissipation and lower thermal resistance, making it well suited for high temperature applications. All in all, the GT10J312(Q) is an excellent choice for any power electronics application.
The specific data is subject to PDF, and the above content is for reference
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GT10J312(Q) Datasheet/PDF