GT10G131(TE12L,Q) Discrete Semiconductor Products

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IGBT is the abbreviation of Insulated Gate Bipolar Transistor. IGBTs are a type of transistor using both the bipolar junction transistor (BJT) and MOSFET technologies. They are typically used when switching a large load capacity and are capable of both high amplitude current and voltage. GT10G131(TE12L,Q) is a single IGBT designed for high current and voltage applications.

Key Features

• It is a 12 A IGBT with a suitable turn-off tail current capability and a small predicted parameter variation
• It hasalowturn-offvoltageovertemperature
• Low breakdown voltage
• Low capacitances
• Ultra-low gate drive power
• Suitable for hard or soft switching

Application Fields

The GT10G131(TE12L,Q) is applicable in a variety of applications such as traction applications, power drive systems, power supplies, uninterruptible power supplies, high voltage inversion and HVAC inverters. It is also suitable for solar inverters, induction heating, UPS and power factor correction circuits.

Working Principle

This IGBT consists of two components, the source and the gate. The source is formed from two opposing diodes connected in series and the gate is a layer of oxide material (an oxide barrier). The oxide layer allows for the flow of current between the diodes when the voltage is applied across the terminals. When the voltage is increased, current begins to flow between the diodes and this causes the gate to form an induced electric field. This electric field is used to initiate the transistor switch. The transistors switch is when charge carriers move from the source to the drain (the two diodes). When the switch is on, current flows across the channel and the source will then be linked to the drain and the gate oxide layer will be used to regulate the voltage.

When the switch is turned off, the charge carriers do not cross the gate oxide layer, thus preventing any current from passing through. This allows the GT10G131(TE12L,Q) to be used for high current and voltage applications. The GT10G131(TE12L,Q) can be operated up to 55 V reverse gate source voltage.

Benefits

The GT10G131(TE12L,Q) IGBT is beneficial due to its low turn-off voltage, low breakdown voltage, low capacitance and ultra-low gate drive power. This means that it is suitable for high voltage applications, consumes less power and has a small variability in its electrical characteristics. This ensures enhanced system reliability and is a cost-effective solution. Additionally, the GT10G131(TE12L,Q) IGBT can be used for both hard and soft switching to increase the overall efficiency of the system.

Conclusion

The GT10G131(TE12L,Q) IGBT is designed for high current and voltage applications and is suitable for use in a variety of fields such as traction applications, power drive systems, power supplies, uninterruptible power supplies, HVAC inverters and solar inverters. It has low forward and reverse gate source voltages and low capacitances and produces a small variability in its electrical characteristics. This makes it a cost-effective solution and provides enhanced system reliability. In addition, it can also be used for hard or soft switching, increasing system efficiency.

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