GUR5H60-E3/45 Allicdata Electronics
Allicdata Part #:

GUR5H60-E3/45-ND

Manufacturer Part#:

GUR5H60-E3/45

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 5A TO220AC
More Detail: Diode Standard 600V 5A Through Hole TO-220AC
DataSheet: GUR5H60-E3/45 datasheetGUR5H60-E3/45 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.38952
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Series: --
Packaging: Tube 
Part Status: Last Time Buy
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Description

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GUR5H60-E3/45 Application Field and Working Principle

The GUR5H60-E3/45 is a 600V single-phase silicon rectifier diode with standard recovering characteristics. It is a member of the E3/45 family of rectifier diodes, which includes devices with current ratings ranging from 5A to 50A. This diode is suitable for a wide range of electronic applications, including automotive, aviation and industrial circuits. This article will discuss the application field and working principle of the GUR5H60-E3/45.

Application

The GUR5H60-E3/45 is designed for use in a wide range of electronic applications including, but not limited to, power supplies, inverters, shunting, and motor control. In these applications, the diode performs a variety of functions including rectifying, soft starting, and protecting from overvoltage or undervoltage conditions. In addition, the GUR5H60-E3/45 can be used for full wave bridge or single phase rectification, offering additional flexibility in use. Furthermore, the diode\'s low reverse voltage and fast recovery time make it an ideal choice for high efficiency and low energy usage.

Working Principle

The working principle of the GUR5H60-E3/45 is based on the fact that current only flows in one direction through a diode, so when the applied voltage reaches a certain minimum threshold, the diode conducts and the current flows. This threshold voltage is known as the threshold voltage (VFT) and is the minimum DC voltage that must be applied to the diode in order for it to conduct. When the applied voltage falls below the VFT, the diode ceases to conduct and the current does not flow. Furthermore, when conducting, the diode exhibits a voltage drop of approximately 300mV, known as the forward voltage drop (VDROP).

In addition to conducting current in a `forward bias\' direction, the GUR5H60-E3/45 can also be used to protect circuits from overvoltage and undervoltage conditions. This is accomplished by connecting the diode in reverse direction, so that when the voltage exceeds a certain threshold (known as the breakdown voltage), the diode conduct and allows current to flow. This is known as `reverse blocking\'.

Conclusion

The GUR5H60-E3/45 is a single-phase silicon rectifier diode that can be used for a variety of applications, from motor control to power supplies. The working principle of the GUR5H60-E3/45 is based on the fact that current only flows in one direction, with a VDROP of approximately 300mV and a VFT of approximately 0.7V. In addition, the GUR5H60-E3/45 can also be used for reverse blocking, making it ideal for applications requiring protection against overvoltage and undervoltage situations.

The specific data is subject to PDF, and the above content is for reference

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