Allicdata Part #: | GURB5H60HE3/45-ND |
Manufacturer Part#: |
GURB5H60HE3/45 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 5A TO263AB |
More Detail: | Diode Standard 600V 5A Surface Mount TO-263AB |
DataSheet: | GURB5H60HE3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.41675 |
Series: | -- |
Packaging: | Tube |
Part Status: | Last Time Buy |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 20µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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GURB5H60HE3/45 application field and working principle
Introduction
The GURB5H60HE3/45 belongs to the Diodes - Rectifiers - Single family of products. This unit is a stud type, 3-phase bridge, 1-element, all-silicon avalanche rectifier. This device features a forward peak current rating of 167 A at 125°C, a DC reverse voltage rating of 600V, and maximum surge current of 800 A.
Features
GURB5H60HE3/45 offers a wide range of features that are benefits to users. These include:
- Low power loss
- High efficiency
- High reliability
- Low noise level
- High current ratings
Application Field
GURB5H60HE3/45 is mainly employed in the industrial drives and uninterruptible power supply systems as well as automotive, industrial, and consumer applications. This device can be used in various fields such as:
- Adjustable speed drives
- Robotics
- Oceanographic equipment
- UPS systems
- Medical imaging apparatuses
Working Principle
GURB5H60HE3/45 works on the principle of avalanche breakdown. It operates by having a single element with a gate capacitance and gate resistance which allows for breakdown to occur. When a voltage is applied between the gate and the element, the breakdown voltage level is reached and current begins to flow through the element. This current is then limited by the gate capacitance and gate resistance in the device.
When avalanche breakdown occurs, the device is able to carry substantial inrush current levels and handle the harsh environment associated with industrial power supplies. The device is then able to block the reverse voltage up to 600 V.
Conclusion
GURB5H60HE3/45 belongs to the Diodes - Rectifiers - Single family of products and offers a variety of features and benefits. It is mainly used in industrial drives, uninterruptible power supplies, and automotive, industrial, and consumer applications. GURB5H60HE3/45 works on the principle of avalanche breakdown and operates by having a element with a gate capacitance and gate resistance which allows for breakdown to occur. When breakdown occurs, the device can carry substantial inrush current levels and block a reverse voltage up to 600V.
The specific data is subject to PDF, and the above content is for reference
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