H11B3300W Allicdata Electronics
Allicdata Part #:

H11B3300W-ND

Manufacturer Part#:

H11B3300W

Price: $ 0.00
Product Category:

Isolators

Manufacturer: ON Semiconductor
Short Description: OPTOISO 5.3KV DARL W/BASE 6DIP
More Detail: Optoisolator Darlington with Base Output 5300Vrms ...
DataSheet: H11B3300W datasheetH11B3300W Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Output Type: Darlington with Base
Supplier Device Package: 6-DIP
Package / Case: 6-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Vce Saturation (Max): 1V
Current - DC Forward (If) (Max): 100mA
Voltage - Forward (Vf) (Typ): 1.35V
Current - Output / Channel: --
Voltage - Output (Max): 25V
Series: --
Input Type: DC
Rise / Fall Time (Typ): --
Turn On / Turn Off Time (Typ): 25µs, 18µs
Current Transfer Ratio (Max): --
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5300Vrms
Number of Channels: 1
Part Status: Obsolete
Packaging: Tube 
Description

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Optoisolators - Transistor, Photovoltaic Output

An optoisolator, or optical isolator, is a device that uses a beam of light passing through an optical element to provide electrical isolation between two circuits or components. The H11B3300W is one type of such device, utilizing a photovoltaic output technology to help it provide the maximum degree of galvanic insulation for protection against ground loops and EMI interference.The optoisolator design of the H11B3300W differs from other types. It consists of an infrared emitting diode (IRED) and photodiode feedthrough input and output, coupled in a matched armature. This design allows the optoisolator to respond quickly and accurately to input signals, and works well in the tight space applications for which it was designed.The technology used in the H11B3300W is based on a phototransistor circuit. The IRED consists of a light emitting diode chip that creates a beam of infrared rays which is directed towards the photodiode. The photodiode then creates a voltage that is passed through the circuit to the output. This creates a source of current that is used to drive the light from the IRED chip. As a result, the circuit is able to transfer input signals, such as those from a computer, through the photodiode to the transistor chip, then to the output.The H11B3300W’s unique design offers a number of advantages to the end user. Primarily, its circuit design ensures fast response times, and wide voltage ranges. This makes the device ideal for applications where speed and accuracy of response are critical, such as medical or hazardous environments. Additionally, the circuit design also renders the device more resistant to shock, vibration, and EMI interference. Furthermore, with its small size and low power consumption, the H11B3300W is greatly suited for applications where space and power are at a premium.Finally, the device is designed to provide strong galvanic isolation by blocking any frequency higher than the optical spectrum. This helps to isolate any low-voltage circuits from high-powered devices which may be in the vicinity, and prevents any surges in voltage from affecting the device. This makes the H11B3300W ideal for a wide range of applications, from industrial to medical systems.In conclusion, the H11B3300W optoisolator is an optically designed, transistor-based device that offers rapid response and significant galvanic insulation. These features not only make the device suited for tight space applications, but also make it highly reliable in various environments where shock and EMI interference are a major concern. Furthermore, its unique design enables the H11B3300W to process signals quickly and accurately, while also providing strong galvanic isolation between two circuits. Finally, the small size and low power consumption of the device makes it the go-to optoisolator in space or power-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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