H11B815300

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Optoisolators are components that employ an optical mechanism to transfer electrical signals between two isolated sections. The most common type of optoisolator is the transistor form, including the H11B815300. This device combines traditional gallium arsenide infrared (GaAsIR) detector with a bipolar transistor output in a single, hermetically-sealed package.

The H11B815300 is ideal for applications requiring isolation of circuit stages to protect against voltage transients produced by external sources. Its design features superior performance in a wide range of electrical and environmental parameters such as sensitivity, speed, power, bias, and reliability, which makes it suitable for a wide variety of isolated interface applications.

The H11B815300 device operates on the principle of photovoltaic output. A light-emitting diode (LED) functions as both the light source and the load which drives the bipolar transistor. As the LED is illuminated, its current creates a voltage drop across the transistor which is then converted from a current to a voltage difference. The intensity of the LED’s light is applied to the optoisolator, providing the required voltage in order to activate the output transistor.

The H11B815300 optoisolator is optimized for digital isolator performance. It provides high-speed signal transmission with low-power consumption and low-bias current. The device is capable of operation from either a 5 V DC or a 5 V DC input and delivers an output current of up to 20 mA. The optical window is also hermetically sealed to avoid any deterioration of the internal circuitry due to dust or moisture.

As a digital isolator, the H11B815300 enhances system noise performance and reliability when applied in a variety of applications such as printer drivers, automotive controllers, instrumentation, and communications systems. The device also provides protection from spikes, transients, and ESD pulses, which protects the system from physical damage and electrical noise.

The H11B815300 optoisolator has a power dissipation rating of 70 mW, which is quite low compared to other optoisolators. This makes it particularly suitable for low-power applications and decreases the risk of over-heating from building up of power dissipation. Additionally, the maximum leakage current of the device is less than 2 nA, reducing system noise due to the optoisolator.

In summary, the H11B815300 optoisolator transistor, photovoltaic output is suitable for a variety of isolated interface applications such as printer drivers, automotive controllers, instrumentation, and communications systems. It provides the advantages of high-speed signal transmission, low-power consumption and low-bias current. It also enhances system noise performance and reliability, and provides protection from spikes, transients, and ESD pulses. Its hermetically sealed optical window prevents any deterioration of the internal circuitry, and its low power dissipation makes it an efficient choice for low-power applications.

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