Allicdata Part #: | H11D3SR2MTR-ND |
Manufacturer Part#: |
H11D3SR2M |
Price: | $ 0.00 |
Product Category: | Isolators |
Manufacturer: | ON Semiconductor |
Short Description: | OPTOISO 4.17KV TRANS W/BASE 6SMD |
More Detail: | Optoisolator Transistor with Base Output 4170Vrms ... |
DataSheet: | H11D3SR2M Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Number of Channels: | 1 |
Voltage - Isolation: | 4170Vrms |
Current Transfer Ratio (Min): | 20% @ 10mA |
Current Transfer Ratio (Max): | -- |
Turn On / Turn Off Time (Typ): | 5µs, 5µs |
Rise / Fall Time (Typ): | -- |
Input Type: | DC |
Output Type: | Transistor with Base |
Voltage - Output (Max): | 200V |
Current - Output / Channel: | 100mA |
Voltage - Forward (Vf) (Typ): | 1.15V |
Current - DC Forward (If) (Max): | 80mA |
Vce Saturation (Max): | 400mV |
Operating Temperature: | -40°C ~ 100°C |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Gull Wing |
Supplier Device Package: | 6-SMD |
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Optoisolators are an important subset of electronic components used in a number of circuit designs and applications. The H11D3SR2M optoisolator is an example of a commonly used photovoltaic output transistor. It’s an essential component for multiple types of circuits where galvanic isolation between the input and output stages is required.
The H11D3SR2M optoisolator is a widely used example of an optically coupled transistor with an integrated photovoltaic cell on its input port. It allows a current to flow without galvanically connecting the input to the output. This provides galvanic isolation and keeps the input and output circuits electrically independent. This makes it an ideal component for use in safety, security, and defense applications, including automobile and industrial environments, where galvanic isolation is required.
The H11D3SR2M consists of a light-emitting diode (LED), which is externally illuminated by a current source. When the LED emits light, it generates a current in the collector-emitter junction of the phototransistor. This in turn creates a voltage at the output. The maximum DC current into the input of the transistor is 8mA, while the AC current is 20 to 30mA.
The maximum collector current is 25mA and the maximum collector-emitter voltage is 30V. The optoisolator has a maximum collector-emitter saturation voltage of 2V@25mA and a maximum forward voltage of 1.2V. Its maximum power dissipation is 560mW with a storage temperature range between -40°C and 125°C.
The H11D3SR2M optoisolator has a wide variety of applications. It is ideal for use in isolating circuits from high-voltage sources, such as in automobile and industrial environments. It can be used to create a signal conditioned to a particular range. It can also provide feedback signal conversion from one circuit to another without making the two circuits electrically connected. All of these features make it an essential component for various applications where galvanic isolation is required.
The H11D3SR2M optoisolator also has a few specific working principles that make it so effective. The first is a self-biasing principle, which allows for a simple two-terminal connection. This biasing configuration ensures that the output voltage is maintained at a constant level, regardless of any changes to the input voltage. The second principle is its low-power design, which makes it ideal for battery-powered systems. And finally, its low temperature stability and maximum collector voltage of up to 30V make it suitable for a variety of applications.
In summary, the H11D3SR2M optoisolator is an ideal choice for a wide variety of applications requiring galvanic isolation. Its self-biasing, low-power, and low-temperature stability features make it an essential component in several industries and applications. Moreover, its photovoltaic output transistor capabilities make it one of the most reliable optoisolators in its class.
The specific data is subject to PDF, and the above content is for reference
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H11D13S | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
H11D13SD | ON Semicondu... | -- | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
H11D1S | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
H11D1SD | ON Semicondu... | -- | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
H11D1W | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
H11D2300W | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
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H11D23SD | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
H11D2S | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
H11D2SD | ON Semicondu... | -- | 1000 | OPTOISO 5.3KV TRANS W/BAS... |
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