Allicdata Part #: | H11G2-ND |
Manufacturer Part#: |
H11G2 |
Price: | $ 0.00 |
Product Category: | Isolators |
Manufacturer: | ON Semiconductor |
Short Description: | OPTOISO 5.3KV DARL W/BASE 6DIP |
More Detail: | Optoisolator Darlington with Base Output 5300Vrms ... |
DataSheet: | H11G2 Datasheet/PDF |
Quantity: | 1000 |
Output Type: | Darlington with Base |
Supplier Device Package: | 6-DIP |
Package / Case: | 6-DIP (0.300", 7.62mm) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 100°C |
Vce Saturation (Max): | 1V |
Current - DC Forward (If) (Max): | 60mA |
Voltage - Forward (Vf) (Typ): | 1.3V |
Current - Output / Channel: | -- |
Voltage - Output (Max): | 80V |
Series: | -- |
Input Type: | DC |
Rise / Fall Time (Typ): | -- |
Turn On / Turn Off Time (Typ): | 5µs, 100µs |
Current Transfer Ratio (Max): | -- |
Current Transfer Ratio (Min): | 1000% @ 10mA |
Voltage - Isolation: | 5300Vrms |
Number of Channels: | 1 |
Part Status: | Obsolete |
Packaging: | Tube |
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The H11G2 optoisolator is a transistor, photovoltaic output type device. It is intended for applications requiring isolation between input/output signal levels such as between a logic circuit and a microprocessor.
The circuit uses a photo-diode which is connected to the collector of an NPN transistor, and then the photodiode is exposed to an optical input. The input signal is supplied to the base of the NPN transistor between two current limiting resistors. When the optical input signal is applied to the photo-diode, the current generated by the photodiode passes through the emitter-base junction of the NPN transistor, consequently the transistor is in a forward biased condition and conducts.
The Collector of the transistor then provides the output signal which is amplified version of the original input signal. The magnitude of the collector current is proportional to the intensity of the light source and the gain of the transistor. In this circuit the transistor provides voltage gain due to the positive feedback effect, which is caused by the current (generated by the photodiode) flowing through the base and the emitter of the transistor.
The H11G2 optoisolator is used in applications such as current regulation, frequency control, signal regulation, switching, and control of mechanical systems. It is also used in instrumentation and control systems. This device is capable of providing galvanic isolation between two circuits of different voltage levels. This ensures that the input and output signals are insulated from each other. Furthermore, it prevents high voltage surges from damaging the electronics.
The H11G2 optoisolator is suitable for a wide range of applications, including industrial automation, factory automation, telecommunications, medical electronics, and consumer electronics. It has a wide operating temperature range, low power consumption, fast switching speed, low noise, and excellent signal isolation.
In summary, the H11G2 optoisolator is a transistor, photovoltaic output type device. It is used in applications requiring isolation between input/output signal levels, such as between a logic circuit and a microprocessor. It is suitable for a wide range of applications and provides excellent signal isolation, fast switching speed, low noise levels, and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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H11G2300 | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV DARL W/BASE... |
H11G2300W | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV DARL W/BASE... |
H11G23S | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV DARL W/BASE... |
H11G23SD | ON Semicondu... | 0.0 $ | 1000 | OPTOISO 5.3KV DARL W/BASE... |
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