H11G13SD Allicdata Electronics
Allicdata Part #:

H11G13SD-ND

Manufacturer Part#:

H11G13SD

Price: $ 0.00
Product Category:

Isolators

Manufacturer: ON Semiconductor
Short Description: OPTOISO 5.3KV DARL W/BASE 6SMD
More Detail: Optoisolator Darlington with Base Output 5300Vrms ...
DataSheet: H11G13SD datasheetH11G13SD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Output Type: Darlington with Base
Supplier Device Package: 6-SMD
Package / Case: 6-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Vce Saturation (Max): 1V
Current - DC Forward (If) (Max): 60mA
Voltage - Forward (Vf) (Typ): 1.3V
Current - Output / Channel: --
Voltage - Output (Max): 100V
Series: --
Input Type: DC
Rise / Fall Time (Typ): --
Turn On / Turn Off Time (Typ): 5µs, 100µs
Current Transfer Ratio (Max): --
Current Transfer Ratio (Min): 1000% @ 10mA
Voltage - Isolation: 5300Vrms
Number of Channels: 1
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Optoisolators are electronic components that allow data signals to travel between two isolated circuits while blocking any electrical currents from passing through them. They are used to provide galvanic isolation between systems to protect both the device and a user from hazardous voltages and to safeguard data transmission between different voltage levels. The optoisolator used in this application is called an H11G13SD, which is a photovoltaic (PV) transistor output optoisolator. This optoisolator is used to provide isolation between a control system and a load while also passing data signals.

The H11G13SD optoisolator is a 6-pin device composed of an infrared emitting diode (IRED) and a phototransistor. It is a 6-pin dual in-line package (DIP) with two sets of stripes, the emitter stripe and the receiver stripe, that are electrically isolated by a transparent base. The emitter stripe contains the IRED while the receiver stripe contains the phototransistor and a base-collector insulation layer. The base-collector insulation layer also serves to protect the phototransistor from any electrical stimuli.

The IRED is driven by input power with an internal resistor (R1) that limits the current to safe levels. When the IRED is activated, it emits infrared light that is focused onto the phototransistor\'s base. This modulated light is then converted to an electrical pulse by the phototransistor, which is then amplified and used as the output signal.

The output of the H11G13SD optoisolator is a collector output that is several hundred times the input when it is measured at the same input voltage. As a result, it provides high isolation and large current transfer ratio (CTR), allowing it to be used for various applications. One of the most popular applications is in interfacing between two circuits with different voltage levels, making it ideal for use in data transmission, such as CANbus or RS232.

The use of the H11G13SD optoisolator is advantageous due its high isolation, which prevents electrical interference from one circuit to the other. This is especially beneficial in environments with high noise, such as industrial or automotive settings, where voltage levels can vary widely. The high CTR of the device also increases the current transfer efficiency allowing it to be used in applications where large amounts of current need to be transmitted. In addition, the device is small and inexpensive, making it a cost-effective solution for a variety of applications.

The H11G13SD optoisolator is an ideal choice for applications where galvanic isolation and easy data transmission are required. It provides high isolation and is suitable for a wide range of voltage levels. Its small size and low cost make it a cost-effective solution for a variety of applications. With its high CTR, it is ideal for transferring large amounts of current, making it the perfect optoisolator for a variety of industrial, automotive, and data communication applications.

The specific data is subject to PDF, and the above content is for reference

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