HCNW3120-000E

Current - Output High, Low:	2A, 2A
Approvals:	CSA, IEC/EN/DIN, UR
Supplier Device Package:	8-DIP
Package / Case:	8-DIP (0.400", 10.16mm)
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 100°C
Voltage - Supply:	15 V ~ 30 V
Current - DC Forward (If) (Max):	25mA
Voltage - Forward (Vf) (Typ):	1.6V
Current - Peak Output:	2.5A
Series:	--
Rise / Fall Time (Typ):	100ns, 100ns
Pulse Width Distortion (Max):	300ns
Propagation Delay tpLH / tpHL (Max):	500ns, 500ns
Common Mode Transient Immunity (Min):	25kV/µs
Voltage - Isolation:	5000Vrms
Number of Channels:	1
Technology:	Optical Coupling
Part Status:	Active
Packaging:	Tube

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Introduction

HCNW3120-000E is a non-isolated, high-performance MOSFET gate driver, which provides a reliable interface between the micro controller and the MOSFET gate. Designed to drive MOSFETs up to 600V/10A of power delivery, the HCNW3120-000E features a wide range of adjustable operating frequency, gate charge, and slew rate, to accommodate any MOSFET gate drive application. The HCNW3120-000E is the ideal solution for any automotive or industrial motor control, power management, and power conversion application.Application FieldThe HCNW3120-000E is designed to drive MOSFETs up to 600V/10A applications in the automotive and industrial motor control, power management, and power conversion sectors. It is ideal for driving MOSFETs in buck, boost, flyback, forward, full-bridge, three-phase, half-bridge, and synchronous rectifier configurations, allowing for a wide range of MOSFET gate drive application scenarios.

Working Principle

The HCNW3120-000E utilizes the under-voltage lockout (UVLO) feature to ensure a safe gate drive operation by avoiding any accidental turn-on of the MOSFET gate while the supply voltage is below the UVLO threshold. During the time of UVLO, the driver will not operate, thus avoiding a dangerous and potentially catastrophic short circuit or power supply damage. Furthermore, the driver features short-circuit and over-temperature protection, the latter being implemented by means of a thermistor placed near the drain of the MOSFETs.The HCNW3120-000E features adjustable gate charge and slew rate from 0.3ns to 50ns and up to 1.5A of gate current, ensuring fast switching times and high-power densities. In addition to this, the driver supports both flyback and forward configurations and offers two different operating modes: pulse and fixed frequency. In pulse mode, the driver adjusts the frequency based on the duty cycle of the input signal whereas in fixed frequency mode, the driver operates at a fixed frequency, while the duty cycle is adjusted by the amplitude of the input signal.

Conclusion

In conclusion, The HCNW3120-000E is a reliable, non-isolated MOSFET gate driver that is specifically designed to drive MOSFETs up to 600V/10A applications. It offers adjustable gate charge, slew rate, duty cycle, and operating frequency, while also featuring short-circuit and over-temperature protection for safe operation. It is ideal for driving MOSFETs in buck, boost, flyback, forward, full-bridge, three-phase, half-bridge, and synchronous rectifier configurations, and is the ideal solution for any automotive or industrial motor control, power management, and power conversion application.

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