Allicdata Part #: | HCT2222ATX-ND |
Manufacturer Part#: |
HCT2222ATX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | TT Electronics/Optek Technology |
Short Description: | TRANS NPN SMT |
More Detail: | Bipolar (BJT) Transistor NPN Surface Mount 4-S... |
DataSheet: | HCT2222ATX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, No Lead |
Supplier Device Package: | 4-SMD |
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Bipolar junction transistors, or BJTs, are two-terminal devices that, when properly biased and activated, serve as an electronic switch or amplifier to control or amplify electronic signals or currents. The HCT2222ATX is a general-purpose, single-pole, PNP, small-signal, medium-power field transistor designed to operate at up to 30 volts with a maximum current rating of 500mA. This transistors is rated at 200mW power dissipation.
The HCT2222ATX is generally used as a low-speed switching device that operates in a wide range of current and voltage combinations. The most common applications of this transistor include small-signal amplification and buffering, switching, bias control, emitter follower circuits and other basic logic circuits. Its low power consumption and high speed make it suitable for low-power electronics applications.
In general, transistors consist of two layers of semiconductor material with different electron affinity levels. The P-type layer (also known as the majority carrier) has more electrons and the N-type layer less electrons. When a voltage is applied to the base or control terminal (B), of the HCT2222ATX, it causes electron movement from the P-type material to the N-type material, creating a potential between the base and the collector terminal (C). This potential is known as the forward voltage drop.
This forward voltage drop reduces the barrier between the P-type and N-type materials, allowing electrons to flow freely from the emitter to the collector of the transistor. This flow of electrons is known as the collector current, and is controlled by the amount of current (IE) flowing into the base terminal. The current gain (hFE) of the HCT2222ATX is typically in the range of 120-400.
The HCT2222ATX is used for a wide range of applications as it can switch a wide range of voltage and current levels. It is typically used to drive small loads such as LEDs, relays, and motors, as well as to amplify audio and video signals. Other applications include the control of motors in toys, appliances and industrial machinery, the control of relay drivers, the switching of stepper motors, and the amplification of voltage signals in data acquisition systems.
In addition to its use as an amplifier, the HCT2222ATX is often used as a logic element in digital circuits. It is used to perform logic operations such as AND, OR, NAND and NOR functions. In these circuits, the logic operation is determined by the amount of current passing through the transistor. For example, if no current passes through the transistor, then the output is low or false. If the current is high or passes through the transistor, then the output is high or true.
The HCT2222ATX is an ideal choice for many low-power switching and amplification applications. Its low power consumption, wide operating temperature range, and high current gain enable it to be used in a variety of electronic systems. Furthermore, its small size and low cost makes it an attractive option for many hobbyist and professional electronics applications.
The specific data is subject to PDF, and the above content is for reference
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