Allicdata Part #: | HFA75MB40C-ND |
Manufacturer Part#: |
HFA75MB40C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 400V 75A D60 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 400V 75... |
DataSheet: | HFA75MB40C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFRED® |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io) (per Diode): | 75A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 75A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 100ns |
Current - Reverse Leakage @ Vr: | 3µA @ 400V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | TO-249AA (Modified), D-60 |
Supplier Device Package: | D-60 |
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HFA75MB40C application field and working principle
The HFA75MB40C is a Schottky diode array designed for use in circuits demanding high performance and low power dissipation. It can be used in both board level and package level designs. The array consists of four 75V, 0.4A Schottky diodes connected in series with a common anode. The structure of the device ensures that each diode has an efficient thermal disconnect from its neighbor, allowing the devices to be utilized in power-sensitive applications.
HFA75MB40C is ideal for applications such as DC/DC converters, OR-ing junctions and as replicas/protectors in battery/power supply systems. They can also be used for grounding, level detection, and frequency modulation.
The working principle of the HFA75MB40C is the same as that of all Schottky diodes. It has two terminals, the anode and the cathode. It is made of a P-N diode with a built-in Schottky barrier, which allows conduction below the normal barrier voltage of the diode. When the voltage at the anode is higher than the voltage at the cathode, current will pass through the diode. When the voltage at the anode is less than that of the cathode, current will not pass through the diode.
In the HFA75MB40C, the Schottky barrier is formed between the n-typesilicon and the metal-silicon junction. When a voltage is applied in the forward direction, electrons move in the n-side to the metal-silicon junction and holes move in the p-side to the metal-silicon junction. This in turn causes current to pass through the device. When the voltage is applied in the reverse direction, the reverse current is blocked.
The HFA75MB40C is designed to provide reliable operation in circuits requiring power dissipation of up to 100W. It has a low threshold voltage of 0.4V and a forward voltage drop of 0.31V. The device has a junction capacitance of 0.45pF and a junction temperature of - 55°C to + 125°C.
The HFA75MB40C is an ideal choice for board-level designs due to its efficient thermal disconnects, low power consumption, and high performance. The device can be used in a variety of applications from DC/DC converters and OR-ing junctions to frequency modulation and level detection.
With its reliable performance, low voltage drop, and high speed of switching, the HFA75MB40C is suitable for both board level and package level designs. Its efficient thermal disconnects ensure that each diode is properly isolated, allowing it to be safely used in power sensitive applications. This makes it ideal for a variety of applications in industries such as automotive, telecommunications, and computing.
The specific data is subject to PDF, and the above content is for reference
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