HFE4083-322 Allicdata Electronics

HFE4083-322 Optoelectronics

Allicdata Part #:

HFE4083-322-ND

Manufacturer Part#:

HFE4083-322

Price: $ 12.01
Product Category:

Optoelectronics

Manufacturer: Finisar Corporation
Short Description: LASER DIODE 850NM 3.6MW TO206AB
More Detail: Laser Diode 850nm 3.6mW 2.2V 20mA TO-206AB, TO-46-...
DataSheet: HFE4083-322 datasheetHFE4083-322 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
100 +: $ 10.91630
Stock 1000Can Ship Immediately
$ 12.01
Specifications
Series: --
Part Status: Active
Lead Free Status / RoHS Status: --
Wavelength: 850nm
Moisture Sensitivity Level (MSL): --
Voltage - Input: 2.2V
Current Rating: 20mA
Power (Watts): 3.6mW
Package / Case: TO-206AB, TO-46-3 Metal Can
Description

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The HFE4083-322 is a semiconductor device used in a variety of applications as a laser diode, or as part of a laser module. It is based upon a vertical cavity surface-emitting laser (VCSEL) structure. A VCSEL is a type of semiconductor laser which can be fabricated in a two-dimensional array, allowing for higher levels of integration and efficiency.

The HFE4083-322 features an 850nm emission peak, making it suitable for many types of laser applications, such as optical media recording and data communications. It is, however, also suitable for a variety of other applications, such as display lighting, medical imaging, point of sale scan, and range finding. It is a compact and reliable device, which typically requires only a simple drive current to operate.

The device consists of a laser element, an active region, and an underlying substrate. The laser element produces coherent light by passing an electrical current through the active region, which consists of material such as gallium arsenide (GaAs). The current then causes the active region to emit light, creating a laser beam in a single color or wavelength.

The active region is encapsulated between layers of electrodes and passivation layers, which serve to protect it from contact. Additionally, the device is packaged in a small, rugged package, which ensures its reliability in operation. The device can also be packaged in a variety of sizes, allowing for its use in a wide range of applications.

The device functions as a laser diode by converting electrical current into light. When an electrical current is passed through the device, its active region emits light, which is then converted into a beam by the device\'s optical components. The beam exits through the package and can be directed to a target or system.

The HFE4083-322 is capable of producing up to 20mW of output power, depending upon its drive current. It possesses low threshold current values, meaning that it can operate with a small drive current, and can be used in a wide range of applications. Additionally, its low operating temperature reduces thermal load on the substrate.

The HFE4083-322 can be used as part of a range of laser modules, making it suitable for many types of applications, such as optical sensing and imaging. In these applications, the device is typically combined with an optics assembly, which allows the generated laser beam to be directed to a specific target or system. The combination of the laser and optics assembly creates an efficient and cost effective solution.

In summary, the HFE4083-322 is a compact and reliable semiconductor device used as a laser diode, or as part of a laser module. It is suitable for many types of applications including optical media recording, data communications, display lighting, medical imaging, and range finding. It possesses a low threshold current value, allowing it to operate with a small drive current. Additionally, its small size makes it suitable for use in a wide range of laser modules.

The specific data is subject to PDF, and the above content is for reference

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