| Allicdata Part #: | HIGFEB1BOSA1-ND |
| Manufacturer Part#: |
HIGFEB1BOSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MODULE IGBT HYBRID PK |
| More Detail: | IGBT Module |
| DataSheet: |  HIGFEB1BOSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| IGBT Type: | -- |
| Configuration: | -- |
| Vce(on) (Max) @ Vge, Ic: | -- |
| Input: | -- |
| Operating Temperature: | -- |
| Mounting Type: | -- |
| Package / Case: | -- |
| Supplier Device Package: | -- |
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Transistors - IGBTs - Modules
The HIGFEB1BOSA1 is an insulated-gate bipolar transistor (IGBT) module that is used mostly in the electric power and industrial applications. It is expected to improve the reliability and efficiency of power supplies, motors, and inverters while also providing thermal protection in the event of fault conditions.
It is composed of two main components: an IGBT and an anti-parallel diode. The IGBT has two terminals, the emitter and the collector, which are designed to control the electric current flow when activated. The anti-parallel diode is composed of two terminals and is designed to protect against short circuits and over-current conditions. The modules also come with heat sink and a dedicated EMC filter.
Application Field
The HIGFEB1BOSA1 is suitable for applications related to a wide variety of electric power, industrial and automotive systems, such as: electric drives, welding machines, power factor correction, uninterruptible power supplies, frequency converters and photovoltaic inverters. It can also be used in lighting applications.
Working Principle
The basic working principle of the HIGFEB1BOSA1 is temperature independent. When energized, the IGBT\'s emitter and collector terminals will conduct a current with a low voltage drop. This current flow can be adjusted by adjusting the gate voltage to control the characteristics of conduction. The anti-parallel diode is designed to provide protection during fault conditions, or when a voltage or current is applied in reverse. In this way, the module is capable of providing thermal protection.
The module also features a built-in EMC filter which helps reduce noise and enhance system reliability.
The HIGFEB1BOSA1 is designed for the highest levels of reliability and efficiency, making it a popular choice for many industrial, power and automotive applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| HIGFEB1BOSA1 | Infineon Tec... | 0.0 $ | 1000 | MODULE IGBT HYBRID PKIGBT... |
| HIGFED1BOSA1 | Infineon Tec... | 0.0 $ | 1000 | MODULE IGBT HYBRID PKIGBT... |
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